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CFY66-08PS

Description
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
CategoryDiscrete semiconductor    The transistor   
File Size111KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

CFY66-08PS Overview

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

CFY66-08PS Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionDISK BUTTON, O-CRDB-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage3.5 V
Maximum drain current (ID)0.06 A
FET technologyHIGH ELECTRON MOBILITY
highest frequency bandK BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
GuidelineESA/SCC 5613/002
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
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