KBL10 datasheet, PDF - EEWORLD Datasheet

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KBL10: DescriptionBridge Rectifier Diode, 4A, 1000V V(RRM),; CategoryDiscrete semiconductor diode; File Size32KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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KBL10 Overview

Bridge Rectifier Diode, 4A, 1000V V(RRM),

KBL10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	150 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	4 A
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO

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BL

FEATURES

GALAXY ELECTRICAL

KBL005 --- KBL10

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 4.0 A

SILICON BRIDGE RECTIFIERS

◇

Rating to 1000V PRV

◇

Surge overload rating to 150 Amperes peak

◇

Ideal for printed circuit board

KBL

.770(19.558)

.730(18.542)

.265(6.73)

.235(5.97)

45

0

◇

Reliable low cost construction utilizing molded

.725(16.383)

.605(15.367)

plastic technique results in inexpensive product

◇

Lead solderable per MIL-STD-202 method 208

.750(19)Min

_

+

.070(1.778)

(TYP)

.052(1.32)

.048(1.22)

.200(5.08)

TYP

.210(5.33)

.190(4.83)

Dimensions in inches and (mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

℃

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

KBL

005

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard

Output current

@T

A

=

50℃

KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNITS

100

70

100

200

140

200

400

280

400

4.0

600

420

600

800

560

800

1000

700

1000

V

A

V

RRM

V

RMS

V

DC

I

(AV)

50

35

50

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

at 2.0 A

Maximum reverse current

at rated DC blocking voltage

@T

A

=25

℃

@T

A

=100

℃

I

FSM

150

A

V

F

I

R

T

j

T

STG

1.0

10

1

- 55 ---- + 150

V

µA

mA

℃

www.galaxycn.com

Operating junction temperature range

Storage temperature range

Document Number 0287073

BL

GALAXY ELECTRICAL

1.

KBL10 Related Products

	KBL10	KBL01	HGN36100	RNN55C2083DMM7665	KBL04	KBL06	KBL08
Description	Bridge Rectifier Diode, 4A, 1000V V(RRM),	Bridge Rectifier Diode, 4A, 100V V(RRM),	Circuit breaker, PowerPact H, thermal magnetic, 100A, 3 pole, 600V, 18kA	Fixed Resistor, Metal Film, 0.1W, 208000ohm, 200V, 0.5% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED	Bridge Rectifier Diode, 4A, 400V V(RRM),	Bridge Rectifier Diode, 4A, 600V V(RRM),	Bridge Rectifier Diode, 4A, 800V V(RRM),
Is it Rohs certified?	conform to	conform to	-	incompatible	conform to	conform to	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.	-	-	-	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code	unknown	unknow	-	unknown	unknown	unknown	unknown
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	-	-	1 V	1 V	1 V
Maximum non-repetitive peak forward current	150 A	150 A	-	-	150 A	150 A	150 A
Number of components	4	4	-	-	4	4	4
Maximum operating temperature	150 °C	150 °C	-	175 °C	150 °C	150 °C	150 °C
Maximum output current	4 A	4 A	-	-	4 A	4 A	4 A
Maximum repetitive peak reverse voltage	1000 V	100 V	-	-	400 V	600 V	800 V
surface mount	NO	NO	-	NO	NO	NO	NO
Base Number Matches	-	1	-	-	1	1	1

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