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KBL04

Description
Bridge Rectifier Diode, 4A, 400V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size32KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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KBL04 Overview

Bridge Rectifier Diode, 4A, 400V V(RRM),

KBL04 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current4 A
Maximum repetitive peak reverse voltage400 V
surface mountNO
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
KBL005 --- KBL10
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
KBL
.770(19.558)
.730(18.542)
.265(6.73)
.235(5.97)
45
0
Reliable low cost construction utilizing molded
.725(16.383)
.605(15.367)
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
.750(19)Min
_
+
.070(1.778)
(TYP)
.052(1.32)
.048(1.22)
.200(5.08)
TYP
.210(5.33)
.190(4.83)
Dimensions in inches and (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBL
005
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=
50℃
KBL01 KBL02 KBL04 KBL06 KBL08 KBL10 UNITS
100
70
100
200
140
200
400
280
400
4.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150
A
V
F
I
R
T
j
T
STG
1.0
10
1
- 55 ---- + 150
- 55 ---- + 150
V
µA
mA
www.galaxycn.com
Operating junction temperature range
Storage temperature range
Document Number 0287073
BL
GALAXY ELECTRICAL
1.

KBL04 Related Products

KBL04 KBL01 HGN36100 RNN55C2083DMM7665 KBL06 KBL08 KBL10
Description Bridge Rectifier Diode, 4A, 400V V(RRM), Bridge Rectifier Diode, 4A, 100V V(RRM), Circuit breaker, PowerPact H, thermal magnetic, 100A, 3 pole, 600V, 18kA Fixed Resistor, Metal Film, 0.1W, 208000ohm, 200V, 0.5% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED Bridge Rectifier Diode, 4A, 600V V(RRM), Bridge Rectifier Diode, 4A, 800V V(RRM), Bridge Rectifier Diode, 4A, 1000V V(RRM),
Is it Rohs certified? conform to conform to - incompatible conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. - - - Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknow - unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V - - 1 V 1 V 1 V
Maximum non-repetitive peak forward current 150 A 150 A - - 150 A 150 A 150 A
Number of components 4 4 - - 4 4 4
Maximum operating temperature 150 °C 150 °C - 175 °C 150 °C 150 °C 150 °C
Maximum output current 4 A 4 A - - 4 A 4 A 4 A
Maximum repetitive peak reverse voltage 400 V 100 V - - 600 V 800 V 1000 V
surface mount NO NO - NO NO NO NO
Base Number Matches 1 1 - - 1 1 -
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