Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Contacts | 2 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Other features | METALLURGICALLY BONDED |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.47 V |
| JESD-30 code | O-XALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 150 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Maximum output current | 5 A |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Guideline | MIL |
| Maximum repetitive peak reverse voltage | 40 V |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| JANTXV1N6702 | 1N6700 | 1N6700E3 | 1N6701 | JAN1N6702 | DSB5A20 | DSB5A30 | DSB5A40 | |
|---|---|---|---|---|---|---|---|---|
| Description | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, HERMETIC SEALED PACKAGE-2 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, HERMETIC SEALED PACKAGE-2 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 30V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
| Reach Compliance Code | not_compliant | compli | compli | compli | not_compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED | METALLURGICALLY BONDED |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| JESD-30 code | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum output current | 5 A | 5 A | 5 A | 5 A | 5 A | 5 A | 5 A | 5 A |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Guideline | MIL | MIL | MIL | MIL | MIL | MIL | MIL | MIL |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | Microsemi | - | - | - | Microsemi | Microsemi | Microsemi | Microsemi |
| Contacts | 2 | 2 | - | 2 | 2 | 2 | 2 | 2 |
| Maximum forward voltage (VF) | 0.47 V | - | - | - | 0.47 V | 0.55 V | 0.55 V | 0.55 V |
| JESD-609 code | e0 | e0 | - | e0 | e0 | e0 | e0 | e0 |
| Maximum operating temperature | 125 °C | - | - | - | 125 °C | 125 °C | 125 °C | 125 °C |
| Certification status | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 40 V | - | - | - | 40 V | 20 V | 30 V | 40 V |
| Terminal surface | Tin/Lead (Sn/Pb) | TIN LEAD | - | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | TIN LEAD |
| package instruction | - | HERMETIC SEALED PACKAGE-2 | HERMETIC SEALED PACKAGE-2 | HERMETIC SEALED PACKAGE-2 | O-XALF-W2 | HERMETIC SEALED PACKAGE-2 | HERMETIC SEALED PACKAGE-2 | O-XALF-W2 |