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FPN330D75Z

Description
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE
CategoryDiscrete semiconductor    The transistor   
File Size441KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FPN330D75Z Overview

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE

FPN330D75Z Parametric

Parameter NameAttribute value
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-226AE
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
FPN330 / FPN330A
FPN330
FPN330A
C
TO-226
B
E
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NB.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
30
50
5.0
3.0
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
FPN330 / FPN330A
1.0
50
125
Units
W
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
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