FRX130R1 datasheet, PDF - EEWORLD Datasheet

FRX130R1: DescriptionPower Field-Effect Transistor, 6A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size116KB，5 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FRX130R1 Overview

Power Field-Effect Transistor, 6A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	CHIP CARRIER, R-CQCC-N18
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N18
JESD-609 code	e0
Number of components	1
Number of terminals	18
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	11.4 W
Maximum pulsed drain current (IDM)	18 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	QUAD
Transistor component materials	SILICON

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