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HZS2ALL

Description
Zener Diode, 1.8V V(Z), 11.11%, 0.25W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size22KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZS2ALL Overview

Zener Diode, 1.8V V(Z), 11.11%, 0.25W, Silicon, Unidirectional, DO-34, MHD, 2 PIN

HZS2ALL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE, LOW DYNAMIC IMPEDANCE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance350 Ω
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.25 W
Certification statusNot Qualified
Nominal reference voltage1.8 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance11.11%
Working test current0.5 mA
HZS-LL Series
Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
ADE-208-122A(Z)
Rev 1
Features
Vz-Iz characteristics are semilogarithmic linear from I
Z
= 1nA to 1mA and have sharper breakdown knees
in a low current region, and also lower V
Z
temperature coefficients .
Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the
current zeners).
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-LL Series
Mark
Type No.
Package Code
MHD
Outline
2
A
1
Type No.
Cathode band
2
1. Cathode
2. Anode
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