UFZT688B datasheet, PDF - EEWORLD Datasheet

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UFZT688B: DescriptionPower Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size98KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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UFZT688B Overview

Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UFZT688B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SOT-223, 4 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.4 V

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SOT223 NPN SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Extremely low equivalent on resistance;

R

CE(sat)

83mΩ at 3A

* Gain of 400 at I

C

=3 Amps and very low saturation voltage

APPLICATIONS

* Flash gun convertors & Battery powered circuits

PARTMARKING DETAIL

COMPLEMENTARY TYPE -

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

FZT688B

FZT788B

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

FZT688B

C

E

C

B

VALUE

12

5

10

4

2

-55 to +150

UNIT

V

A

W

°C

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

Breakdown Voltages

V

(BR)CBO

12

V

(BR)CEO

V

(BR)EBO

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

I

CBO

I

EBO

V

CE(sat)

12

5

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

V

0.1

0.04

0.06

0.18

0.35

0.40

1.1

1.0

500

400

100

150

200

40

500

MHz

pF

ns

µ

A

µ

A

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=10V

V

EB

=4V

I

C

=0.1A, I

B

=1mA

I

C

=0.1A,I

B

=0.5mA*

I

C

=1A, I

B

=50mA*

I

C

=3A, I

B

=20mA*

I

C

=4A, I

B

=50mA*

I

C

=3A, I

B

=20mA*

I

C

=3A, V

CE

=2V

I

C

=0.1A, V

CE

=2V*

I

C

=3A, V

CE

=2V*

I

C

=10A, V

CE

=2V*

I

C

=50mA,V

CE

=5V

f=50MHz

V

EB

=0.5Vf=1MHz

V

CB

=10V,f=1MHz

I

C

=500mA, I

B1

=50A

I

B2

=50mA, V

CC

=10V

V

Base-Emitter SaturationVoltage

Base-Emitter Turn-On Voltage

Static Forward Current Transfer

Ratio

Transition Frequency

Input Capacitance

Output Capacitance

Switching Times

V

BE(sat)

V

BE(on)

h

FE

f

T

C

ibo

C

obo

t

on

t

off

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

3 - 217

UFZT688B Related Products

	UFZT688B
Description	Power Bipolar Transistor, 4A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SOT-223, 4 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.4 V

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