UFZT696BTC datasheet, PDF - EEWORLD Datasheet

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UFZT696BTC: DescriptionPower Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,; CategoryDiscrete semiconductor The transistor; File Size110KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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UFZT696BTC Overview

Power Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

UFZT696BTC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	180 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz
Maximum off time (toff)	4400 ns
Maximum opening time (tons)	80 ns
VCEsat-Max	0.25 V

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UFZT696BTC Related Products

	UFZT696BTC	UFZT696B	UFZT696BTA
Description	Power Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,	Power Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin	Power Bipolar Transistor, 0.5A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
Is it Rohs certified?	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
Reach Compliance Code	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	180 V	180 V	180 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	150	150	150
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	MATTE TIN	Matte Tin (Sn)	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	70 MHz	70 MHz	70 MHz
VCEsat-Max	0.25 V	0.25 V	0.25 V
Collector-based maximum capacity	6 pF	-	6 pF
Maximum off time (toff)	4400 ns	-	4400 ns
Maximum opening time (tons)	80 ns	-	80 ns

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