J105/106/107
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J105
J106
J107
V
GS(off)
(V)
–4.5 to –10
–2 to –6
–0.5 to –4.5
r
DS(on)
Max (W)
3
6
8
I
D(off)
Typ (pA)
10
10
10
t
ON
Typ (ns)
14
14
14
FEATURES
D
D
D
D
D
Low On-Resistance: J105 < 3
W
Fast Switching—t
ON
: 14 ns
Low Leakage: 10 pA
Low Capacitance: 20 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J105/106/107 are high-performance JFET analog
switches designed to offer low on-resistance and fast
switching. r
DS(on)
<3
W
is guaranteed for the J105 making this
device the lowest of any commercially available JFET.
The low cost TO-226AA (TO-92) plastic package is available
in a wide range of tape-and-reel options (see Packaging
Information). For similar products in TO-206AC (TO-52)
packaging, see the U290/291 data sheet.
TO-226AA
(TO-92)
D
1
S
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
7-1
J105/106/107
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J105
J106
J107
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
b
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
I
G
= –1
mA
, V
DS
= 0 V
V
DS
= 5 V, I
D
= 1
mA
V
DS
= 15 V, V
GS
= 0 V
V
GS
= –15 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 10 V, I
D
= 25 mA
V
DS
= 5 V, V
GS
= –10 V
T
A
= 125_C
V
GS
= 0 V, I
D
= 1 mA
I
G
= 1 mA , V
DS
= 0 V
–35
–25
–4.5
500
–10
–25
–2
200
–3
–3
–6
–25
V
–0.5
100
–3
–4.5
mA
–0.02
–10
–0.01
0.01
5
nA
3
3
3
3
0.7
6
8
W
V
Dynamic
Common-Source Forward
Transconductance
b
Common-Source
Output Conductance
b
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
V
DS
= 10 V, I
D
= 25 mA
f = 1 kHz
55
mS
5
3
120
20
3
160
35
6
160
35
8
160
pF
35
nV⁄
√Hz
W
V
GS
= 0 V, I
D
= 0 mA
f = 1 kHz
V
DS
= 0 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 0 V, V
GS
= –10 V
f = 1 MHz
V
DG
= 10 V, I
D
= 25 mA
f = 1 kHz
Switching
t
d(on)
Turn-On Time
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
V
DD
= 1.5 V, V
GS(H)
= 0 V
See Switching Diagram
8
ns
5
9
NVA
6
www.vishay.com
7-2
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
10
r
DS(on)
– Drain-Source On-Resistance (
Ω )
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
I
DSS
– Saturation Drain Current (mA)
8
1.6
2 .0
r
DS(on)
– Drain-Source On-Resistance (
Ω )
20
On-Resistance vs. Drain Current
T
A
= 25_C
16
6
r
DS
I
DSS
1.2
12
V
GS(off)
= –3 V
4
0.8
8
–5 V
4
–8 V
0
10
100
I
D
– Drain Current (mA)
1000
2
0.4
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
On-Resistance vs. Temperature
10
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 10 mA
r
DS
changes
X
0.7%/_C
8
I
D
– Drain Current (mA)
400
500
Output Characteristics
V
GS(off)
= –5 V
V
GS
= 0 V
–0.5 V
300
–1.0 V
–1.5 V
200
–2.0 V
100
–2.5 V
–3.0 V
6
V
GS(off)
= –3 V
–5 V
4
–8 V
2
0
–55
0
–35
–15
5
25
45
65
85
105
125
2
4
6
8
10
T
A
– Temperature (_C)
V
DS
– Drain-Source Voltage (V)
Turn-On Switching
20
t
r
approximately independent of I
D
V
DD
= 1.5 V, R
G
= 50
W
V
GS(L)
= –10 V
Switching Time (ns)
Switching Time (ns)
Turn-Off Switching
t
d(off)
independent of device V
GS(off
)
V
DD
= 1.5 V, V
GS(L)
= –10 V
16
t
r
t
d(on)
@ I
D
= 30 mA
8
12
t
d(off)
8
t
f
4
V
GS(off)
= –3 V
4
t
d(on)
@ I
D
= 10 mA
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
GS(off)
= –8 V
0
0
10
20
30
40
50
I
D
– Drain Current (mA)
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-3
J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance vs. Gate-Source Voltage
150
g
fs
– Forward Transconductance (mS)
V
DS
= 0 V
f = 1 MHz
120
200
V
GS(off)
= –5 V
100
V
DS
= 10 V
f = 1 kHz
Transconductance vs. Drain Current
T
A
= –55_C
25_C
10
C (pF)
90
C
iss
60
C
rss
30
125_C
0
0
–4
–8
–12
–16
–20
1
1
10
I
D
– Drain Current (mA)
100
V
GS
– Gate-Source Voltage (V)
Output Conductance vs. Drain Current
20
V
GS(off)
= –5 V
10
g
os
– Output Conductance (mS)
V
DS
= 10 V
f = 1 kHz
100
Noise Voltage vs. Frequency
V
DG
= 10 V
T
A
= –55_C
25_C
1
125_C
e
n
– Noise Voltage
(
nV
⁄
√
Hz
)
10
I
D
= 10 mA
0.1
1
10
I
D
– Drain Current (mA)
100
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
300
g
fs
and g
os
@ V
DS
= 10 V
V
GS
= 0 V, f = 1 kHz
g
fs
– Forward Transconductance (mS)
260
24
10 nA
g
os
– Output Conductance (mS)
g – Output Conductance (mS)
30
100 nA
Gate Leakage Current
T
A
= 125_C
100 mA
I
GSS
@ 125_C
I
G
– Gate Leakage
1 nA
100 mA
100 pA
T
A
= 25_C
25 mA
25 mA
220
g
fs
g
os
18
180
12
140
6
10 pA
I
GSS
@ 25_C
100
0
–2
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
–10
1 pA
0
4
8
12
16
20
V
DG
– Drain-Gate Voltage (V)
www.vishay.com
7-4
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
J105/106/107
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
J105
V
GS(L)
R
L*
I
D(on)
*Non-inductive
–12V
50 W
28 mA
V
DD
J106
–7V
50 W
27 mA
J107
–5V
50 W
26 mA
V
GS(H)
R
L
OUT
Input Pulse
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Sampling Scope
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
V
GS(L)
1 kW
V
IN
Scope
51
W
51
W
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
www.vishay.com
7-5
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