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J105-E3

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size49KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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J105-E3 Overview

Transistor

J105-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknown
FET technologyJUNCTION
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature135 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.36 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
J105/106/107
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
J105
J106
J107
V
GS(off)
(V)
–4.5 to –10
–2 to –6
–0.5 to –4.5
r
DS(on)
Max (W)
3
6
8
I
D(off)
Typ (pA)
10
10
10
t
ON
Typ (ns)
14
14
14
FEATURES
D
D
D
D
D
Low On-Resistance: J105 < 3
W
Fast Switching—t
ON
: 14 ns
Low Leakage: 10 pA
Low Capacitance: 20 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J105/106/107 are high-performance JFET analog
switches designed to offer low on-resistance and fast
switching. r
DS(on)
<3
W
is guaranteed for the J105 making this
device the lowest of any commercially available JFET.
The low cost TO-226AA (TO-92) plastic package is available
in a wide range of tape-and-reel options (see Packaging
Information). For similar products in TO-206AC (TO-52)
packaging, see the U290/291 data sheet.
TO-226AA
(TO-92)
D
1
S
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
7-1

J105-E3 Related Products

J105-E3 J107-TR1 J106-TR1 J105-TR1
Description Transistor Transistor Transistor Transistor
Is it Rohs certified? conform to incompatible incompatible incompatible
Maker Vishay Vishay Vishay Vishay
Reach Compliance Code unknown unknown unknown unknown
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
JESD-609 code e3 e0 e0 e0
Maximum operating temperature 135 °C 150 °C 135 °C 135 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.36 W 0.31 W 0.36 W 0.36 W
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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