HSMS-282x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for
both analog and digital applications. This series offers
a wide range of specifications and package configura-
tions to give the designer wide flexibility. Typical appli-
cations of these Schottky diodes are mixing, detecting,
switching, sampling, clamping, and wave shaping. The
HSMS-282x series of diodes is the best all-around choice
for most applications, featuring low series resistance,
low forward voltage at all current levels and good RF
characteristics.
Note that Avago’s manufacturing techniques assure
that dice found in pairs and quads are taken from
adjacent sites on the wafer, assuring the highest degree
of match.
Features
•
Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
• Low FIT (Failure in Time) Rate*
• Six-sigma Quality Level
• Single, Dual and Quad Versions
• Unique Configurations in Surface Mount SOT-363 Package
– increase flexibility
– save board space
– reduce cost
• HSMS-282K Grounded Center Leads Provide up to 10 dB
Higher Isolation
• Matched Diodes for Consistent Performance
• Better Thermal Conductivity for Higher Power Dissipation
• Lead-free Option Available
*
For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification,
SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
UNCONNECTED
TRIO
6
5
4
1
#0
2
1
#2
2
1
#3
2
1
#4
2
1
2
3
K
COMMON
CATHODE QUAD
6
5
4
1
2
3
L
COMMON
ANODE QUAD
6
5
4
UNCONNECTED
PAIR
3
4
RING
QUAD
3
4
BRIDGE
QUAD
3
4
CROSS-OVER
QUAD
3
4
1
#5
2
1
#7
2
1
#8
2
1
#9
2
1
2
M
3
1
2
N
3
BRIDGE
QUAD
6
5
4
6
RING
QUAD
5
4
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
1
2
P
3
1
2
R
3
B
COMMON
ANODE
C
COMMON
CATHODE
E
F
2
Pin Connections and Package
Marking
1
2
3
6
5
4
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1
µs
Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/SOT-143
1
15
150
-65 to 150
500
SOT-323/SOT-363
1
15
150
-65 to 150
150
Notes:
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications” for
appropriate package marking.
Electrical Specifications T
C
= 25°C, Single Diode
[3]
Part
Number
HSMS
[4]
2820
2822
2823
2824
2825
2827
2828
2829
282B
282C
282E
282F
282K
282L
282M
282N
282P
282R
Test Conditions
Notes:
1.
∆V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
∆C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. R
D
= R
S
+ 5.2Ω at 25°C and I
f
= 5 mA.
GUx
Package
Marking
Code
C0
C2
C3
C4
C5
C7
C8
C9
C0
C2
C3
C4
CK
CL
HH
NN
CP
OO
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made
to the circuit board.
Lead
Code
0
2
3
4
5
7
8
9
B
C
E
F
K
L
M
N
P
R
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[4]
Bridge Quad
[4]
Cross-over Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
I
R
= 100 mA
Minimum
Breakdown
Voltage
V
BR
(V)
15
Maximum
Forward
Voltage
V
F
(mV)
340
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
0.5
10
Maximum
Reverse
Leakage
I
R
(nA) @
V
R
(V)
100
1
Maximum
Capacitance
C
T
(pF)
1.0
Typical
Dynamic
Resistance
R
D
(Ω)
[5]
12
I
F
= 1 mA
[1]
V
F
= 0 V
I
F
= 5 mA
f = 1 MHz
[2]
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Avago defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
3
x C
4
C
1
x C
2
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
A
C
1
C
C
2
C
4
B
C
3
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1 1
1
–– + –– + ––
C
2
C
3
C
4
This information does not apply
to cross-over quad diodes.
Linear Equivalent Circuit Model
Diode Chip
R
j
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
Units
V
pF
eV
A
A
Ω
V
HSMS-282x
15
0.7
0.69
1E - 4
2.2E - 8
1.08
6.0
0.65
2
0.5
R
S
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
4
Typical Performance, T
C
= 25°C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
C
T
– CAPACITANCE (pF)
I
R
– REVERSE CURRENT (nA)
10
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
100,000
1
10,000
0.8
1000
0.6
1
100
0.4
0.1
10
1
0
5
0.01
0
0.10
0.20
0.30
0.40
0.50
V
F
– FORWARD VOLTAGE (V)
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
0.2
0
0
2
4
6
8
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 3. Total Capacitance vs.
Reverse Voltage.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
1000
30
30
100
1.0
10
I
F
(Left Scale)
10
100
I
F
(Left Scale)
10
10
1
∆V
F
(Right Scale)
1
∆V
F
(Right Scale)
1
0.1
1
10
100
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
1
0.10
0.15
0.20
0.1
0.25
I
F
– FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Dynamic Resistance vs.
Forward Current.
Figure 5. Typical V
f
Match, Series Pairs
and Quads at Mixer Bias Levels.
Figure 6. Typical V
f
Match, Series Pairs
at Detector Bias Levels.
1
10
10
V
O
– OUTPUT VOLTAGE (V)
V
O
– OUTPUT VOLTAGE (V)
DC bias = 3
µA
0.1
-25°C
+25°C
+75°C
0.1
0.01
+25°C
CONVERSION LOSS (dB)
1
9
8
0.01
RF in 18 nH HSMS-282B Vo
3.3 nH
100 pF
100 KΩ
0
0.001
0.0001
1E-005
-20
RF in
68
Ω
HSMS-282B
Vo
100 pF
7
4.7 KΩ
20
30
6
0
2
4
6
8
10
12
LOCAL OSCILLATOR POWER (dBm)
0.001
-40
-30
-20
-10
-10
0
10
P
in
– INPUT POWER (dBm)
P
in
– INPUT POWER (dBm)
Figure 7. Typical Output Voltage vs.
Input Power, Small Signal Detector
Operating at 850 MHz.
Figure 8. Typical Output Voltage vs.
Input Power, Large Signal Detector
Operating at 915 MHz.
Figure 9. Typical Conversion Loss vs.
L.O. Drive, 2.0 GHz (Ref AN997).
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
R
D
– DYNAMIC RESISTANCE (Ω)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (µA)
5
Applications Information
Product Selection
Avago’s family of surface mount
Schottky diodes provide unique
solutions to many design prob-
lems. Each is optimized for
certain applications.
The first step in choosing the right
product is to select the diode type.
All of the products in the
HSMS-282x family use the same
diode chip – they differ only in
package configuration. The same
is true of the HSMS-280x, -281x,
285x, -286x and -270x families.
Each family has a different set of
characteristics, which can be
compared most easily by consult-
ing the SPICE parameters given
on each data sheet.
The HSMS-282x family has been
optimized for use in RF applica-
tions, such as
DC biased small signal
detectors to 1.5 GHz.
Biased or unbiased large
signal detectors (AGC or
power monitors) to 4 GHz.
Mixers and frequency
multipliers to 6 GHz.
need very low flicker noise. The
HSMS-285x is a family of zero bias
detector diodes for small signal
applications. For high frequency
detector or mixer applications,
use the HSMS-286x family. The
HSMS-270x is a series of specialty
diodes for ultra high speed
clipping and clamping in digital
circuits.
Schottky Barrier Diode Characteristics
Stripped of its package, a
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 10,
along with its equivalent circuit.
R
S
is the parasitic series resis-
tance of the diode, the sum of the
bondwire and leadframe resis-
tance, the resistance of the bulk
layer of silicon, etc. RF energy
coupled into R
S
is lost as heat—it
does not contribute to the recti-
fied output of the diode. C
J
is
parasitic junction capacitance of
the diode, controlled by the thick-
ness of the epitaxial layer and the
diameter of the Schottky contact.
R
j
is the junction resistance of the
diode, a function of the total
current flowing through it.
0.026
≈
––––– at 25°C
I
S
+ I
b
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in
°K
I
S
= saturation current (see
table of SPICE parameters)
I
b
= externally applied bias
current in amps
R
v
= sum of junction and series
resistance, the slope of the
V-I curve
I
S
is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5
µA
for very low
barrier diodes.
The Height of the Schottky Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
I = I
S
(e
S
–––––
V - IR
0.026
– 1)
The other feature of the
HSMS-282x family is its
unit-to-unit and lot-to-lot consis-
tency. The silicon chip used in this
series has been designed to use
the fewest possible processing
steps to minimize variations in
diode characteristics. Statistical
data on the consistency of this
product, in terms of SPICE
parameters, is available from
Avago.
For those applications requiring
very high breakdown voltage, use
the HSMS-280x family of diodes.
Turn to the HSMS-281x when you
On a semi-log plot (as shown in
the Avago catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
N-TYPE OR P-TYPE SILICON SUBSTRATE
;;
METAL
PASSIVATION
N-TYPE OR P-TYPE EPI
8.33 X 10
-5
n T
R
j
= –––––––––––– = R
V
– R
s
I
S
+ I
b
R
S
PASSIVATION
LAYER
SCHOTTKY JUNCTION
C
j
R
j
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
Figure 10. Schottky Diode Chip.
Analog electronics
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