Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 27.4 A |
| Maximum drain-source on-resistance | 0.105 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA |
| JESD-30 code | R-MSFM-P3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 150 W |
| Maximum pulsed drain current (IDM) | 110 A |
| Certification status | Not Qualified |
| Guideline | MILITARY STANDARD (USA) |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 300 ns |
| Maximum opening time (tons) | 225 ns |
| JANTXV2N7225D | 2N7225UPBF | 2N7225U | JANTX2N7225D | 2N7225DPBF | 2N7225D | |
|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
| Is it lead-free? | Contains lead | Lead free | Contains lead | Contains lead | Lead free | Contains lead |
| Is it Rohs certified? | incompatible | conform to | incompatible | incompatible | conform to | incompatible |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Maximum drain current (ID) | 27.4 A | 27.4 A | 27.4 A | 27.4 A | 27.4 A | 27.4 A |
| Maximum drain-source on-resistance | 0.105 Ω | 0.105 Ω | 0.105 Ω | 0.105 Ω | 0.105 Ω | 0.105 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA |
| JESD-30 code | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 150 W | 150 W | 150 W | 150 W | 150 W | 150 W |
| Maximum pulsed drain current (IDM) | 110 A | 110 A | 110 A | 110 A | 110 A | 110 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 40 | NOT SPECIFIED | NOT SPECIFIED | 40 | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 300 ns | 300 ns | 300 ns | 300 ns | 300 ns | 300 ns |
| Maximum opening time (tons) | 225 ns | 225 ns | 225 ns | 225 ns | 225 ns | 225 ns |
| JESD-609 code | e0 | - | e0 | e0 | - | e0 |
| Terminal surface | TIN LEAD | - | Tin/Lead (Sn/Pb) | TIN LEAD | - | TIN LEAD |
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