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JANS2N2369AU

Description
Small Signal Bipolar Transistor, 15V V(BR)CEO, 2-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size437KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANS2N2369AU Overview

Small Signal Bipolar Transistor, 15V V(BR)CEO, 2-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6

JANS2N2369AU Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionSURFACE MOUNT PACKAGE-6
Contacts6
Reach Compliance Codeunknown
Collector-emitter maximum voltage15 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)20
JESD-30 codeR-XDSO-N6
JESD-609 codee0
Number of components2
Number of terminals6
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusQualified
GuidelineMIL-19500
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
LEVELS
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N2369AUBC *
2N4449
JAN
JANTX
JANTXV
JANS
*
Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Total Power Dissipation @
T
A
= +25°C
2N2369A; 2N4449
UA, UB, UBC
U
Symbol
V
CEO
V
EBO
V
CBO
I
CES
P
T
T
op
, T
stg
Value
15
4.5
40
40
0.36
(1)
0.36
(1, 3)
0.50
(2)
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
W
°C
TO-46 (TO-206AB)
2N4449
TO-18 (TO-206AA)
2N2369A
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value
Unit
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
400
°C/W
R
JA
UA, UB, UBC
486
(3)
U
350
Note:
1. Derate linearly 2.06 mW°/C above T
A
= +25°C.
2. Derate linearly 3.44 mW°/C above T
A
= +54.5°C.
3. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CE
= 20Vdc
Symbol
V
(BR)CEO
I
CES
Min.
15
0.4
Max.
Unit
Vdc
Adc
SURFACE MOUNT
UA
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
SURFACE MOUNT
U (Dual Transistor)
T4-LDS-0057 Rev. 3 (110213)
Page 1 of 8

JANS2N2369AU Related Products

JANS2N2369AU 2N2369AUAE3 JANS2N4449 2N2369AUBE3 2N2369AE3 2N4449E3 2N2369AUE3
Description Small Signal Bipolar Transistor, 15V V(BR)CEO, 2-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4 Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6
package instruction SURFACE MOUNT PACKAGE-6 SMALL OUTLINE, R-XDSO-N4 HERMETIC SEALED, METAL CAN-3 SMALL OUTLINE, R-CDSO-N3 CYLINDRICAL, O-MBCY-W3 TO-46, 3 PIN SMALL OUTLINE, R-XDSO-N6
Reach Compliance Code unknown compli unknown compliant compliant compliant compli
Collector-emitter maximum voltage 15 V 15 V 15 V 15 V 15 V 15 V 15 V
Configuration SEPARATE, 2 ELEMENTS SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20 20 20 20
JESD-30 code R-XDSO-N6 R-XDSO-N4 O-MBCY-W3 R-CDSO-N3 O-MBCY-W3 O-MBCY-W3 R-XDSO-N6
Number of components 2 1 1 1 1 1 1
Number of terminals 6 4 3 3 3 3 6
Package body material UNSPECIFIED UNSPECIFIED METAL CERAMIC, METAL-SEALED COFIRED METAL METAL UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR ROUND RECTANGULAR ROUND ROUND RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE CYLINDRICAL CYLINDRICAL SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
surface mount YES YES NO YES NO NO YES
Terminal form NO LEAD NO LEAD WIRE NO LEAD WIRE WIRE NO LEAD
Terminal location DUAL DUAL BOTTOM DUAL BOTTOM BOTTOM DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns
Maximum opening time (tons) 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns

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