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2N4449E3

Description
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size437KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N4449E3 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN

2N4449E3 Parametric

Parameter NameAttribute value
Objectid8059221312
package instructionTO-46, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-206AB
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
LEVELS
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N2369AUBC *
2N4449
JAN
JANTX
JANTXV
JANS
*
Available to JANS quality level only.
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Total Power Dissipation @
T
A
= +25°C
2N2369A; 2N4449
UA, UB, UBC
U
Symbol
V
CEO
V
EBO
V
CBO
I
CES
P
T
T
op
, T
stg
Value
15
4.5
40
40
0.36
(1)
0.36
(1, 3)
0.50
(2)
-65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
W
°C
TO-46 (TO-206AB)
2N4449
TO-18 (TO-206AA)
2N2369A
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value
Unit
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
400
°C/W
R
JA
UA, UB, UBC
486
(3)
U
350
Note:
1. Derate linearly 2.06 mW°/C above T
A
= +25°C.
2. Derate linearly 3.44 mW°/C above T
A
= +54.5°C.
3. Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CE
= 20Vdc
Symbol
V
(BR)CEO
I
CES
Min.
15
0.4
Max.
Unit
Vdc
Adc
SURFACE MOUNT
UA
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
SURFACE MOUNT
U (Dual Transistor)
T4-LDS-0057 Rev. 3 (110213)
Page 1 of 8

2N4449E3 Related Products

2N4449E3 2N2369AUAE3 JANS2N4449 2N2369AUBE3 JANS2N2369AU 2N2369AE3 2N2369AUE3
Description Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AB, TO-46, 3 PIN Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4 Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 2-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6 Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6
package instruction TO-46, 3 PIN SMALL OUTLINE, R-XDSO-N4 HERMETIC SEALED, METAL CAN-3 SMALL OUTLINE, R-CDSO-N3 SURFACE MOUNT PACKAGE-6 CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-XDSO-N6
Reach Compliance Code compliant compli unknown compliant unknown compliant compli
Collector-emitter maximum voltage 15 V 15 V 15 V 15 V 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE SINGLE SEPARATE, 2 ELEMENTS SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20 20 20 20
JESD-30 code O-MBCY-W3 R-XDSO-N4 O-MBCY-W3 R-CDSO-N3 R-XDSO-N6 O-MBCY-W3 R-XDSO-N6
Number of components 1 1 1 1 2 1 1
Number of terminals 3 4 3 3 6 3 6
Package body material METAL UNSPECIFIED METAL CERAMIC, METAL-SEALED COFIRED UNSPECIFIED METAL UNSPECIFIED
Package shape ROUND RECTANGULAR ROUND RECTANGULAR RECTANGULAR ROUND RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
surface mount NO YES NO YES YES NO YES
Terminal form WIRE NO LEAD WIRE NO LEAD NO LEAD WIRE NO LEAD
Terminal location BOTTOM DUAL BOTTOM DUAL DUAL BOTTOM DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns
Maximum opening time (tons) 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns
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