ZPD1 THRU ZPD75
ZENER DIODES
DO-35
FEATURES
♦
Silicon Planar Zener Diodes
♦
The Zener voltages are graded according to
the international E 12 standard. Smaller voltage
tolerances and other Zener voltages are available
upon request.
max.
∅
.079 (2.0)
max. .150 (3.8)
min. 1.083 (27.5)
Cathode
Mark
min. 1.083 (27.5)
♦
These diodes are also available in the Mini-MELF case
with the type designation ZMM1 … ZMM75.
max.
∅
.020 (0.52)
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
= 25°C
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
500
(1)
175
– 55 to +175
mW
°C
°C
NOTES:
(1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
R
thJA
–
–
0.3
(1)
°C/W
NOTES:
(1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
1/20/99
ZPD1 THRU ZPD75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Dynamic Resistance
Zener Voltage
(1)
at
I
Z
= 5 mA
Type
ZPD1
(3)
ZPD2.7
ZPD3
ZPD3.3
ZPD3.6
ZPD3.9
ZPD4.3
ZPD4.7
ZPD5.1
ZPD5.6
ZPD6.2
ZPD6.8
ZPD7.5
ZPD8.2
ZPD9.1
ZPD10
ZPD11
ZPD12
ZPD13
ZPD15
ZPD16
ZPD18
ZPD20
ZPD22
ZPD24
ZPD27
ZPD30
ZPD33
ZPD36
ZPD39
ZPD43
ZPD47
ZPD51
ZPD56
ZPD62
ZPD68
ZPD75
NOTES:
(1) Tested with pulses t
p
= 5 ms
V
Z
(V)
0.7
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
...
...
...
...
...
...
...
...
...
...
...
...
0.8
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
at
I
Z
= 5 mA
f = 1 kHz
r
zj
(Ω)
6.5 (< 8)
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40
40
50
60
(<
(<
(<
(<
80)
90)
90)
100)
at
I
Z
= 1 mA
f = 1 kHz
r
zj
(Ω)
<
<
<
<
<
<
<
<
<
<
<
<
50
500
500
500
500
500
500
500
480
400
200
150
Temp. Coeff.
of Zener Voltage
at
I
Z
= 5 mA
α
vz
(10
–4
/K)
–26 ... –23
–9 ... –4
–9 ... –3
–8 ... –3
–8 ... –3
–7 ... –3
–6 ... –1
–5 ... +2
–3 ... +4
–2 ... +6
–1 ... +7
+2 ... +7
+3 ... +7
+4 ... +7
+5 ... +8
+5 ... +8
+5 ... +9
+6 ... +9
+7 ... +9
+7 ... +9
+8 ... +9.5
+8 ... +9.5
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+8 ... +10
+10 ... +12
+10 ... +12
+10 ... +12
+10 ... +12
typ. +10
(4)
typ. +10
(4)
typ. +10
(4)
typ. +10
(4)
Reverse
Voltage
at
I
R
= 100 nA
V
R
(V)
–
–
–
–
–
–
–
–
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
>
>
>
>
25
27
29
32
Admissible
Zener current
(2)
at
T
amb
= 45°C
I
Z
(mA)
280
135
117
109
101
92
85
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
–
–
–
–
at
T
amb
= 25°C
I
Z
(mA)
340
160
140
130
120
110
100
90
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
–
–
–
–
7.0 ... 7.9
7.7 ... 8.7
8.5 ... 9.6
9.4 ... 10.6
10.4 ... 11.6
11.4 ... 12.7
12.4 ... 14.1
13.8 ... 15.6
15.3 ... 17.1
16.8 ... 19.1
18.8 ... 21.2
20.8 ... 23.3
22.8 ... 25.6
25.1 ... 28.9
28 ... 32
31
34
37
40
...
...
...
...
35
38
41
46
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
<
<
<
<
250
250
300
700
44 ... 50
48 ... 54
52.0 … 60.0
(4)
58.0 … 66.0
(4)
64.0 … 72.0
(4)
70.0 … 79.0
(4)
70 (< 100)
70 (< 100)
< 135
(4)
< 150
(4)
< 200
(4)
< 250
(4)
< 750
< 750
< 1000
(5)
< 1000
(5)
< 1000
(5)
< 1500
(5)
> 35
> 38
–
–
–
–
(2) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
(3) The ZPD1 is a silicon diode operated in forward direction. Hence, the subscript of all parameters should be “F” instead of “Z”.
Connect the cathode terminal to the negative pole
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA
Embedded System
京公网安备 11010802033920号
EEWORLD
