MIL-PRF-19500/452E
13 May 1999
SUPERSEDING
MIL-S-19500/452D
1 October 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE,
TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1
JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY)
TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H;
JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias current, voltage-
reference diodes. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500,
and two levels of product assurance for each unencapsulated device type die. Seven levels of radiation hardened (total dose only)
product assurance are provided for each encapsulated device type, and two levels of product assurance for each unencapsulated
device type die as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA), figure 4
(JANHCB and JANKCB), and figure 5 (JANHCC and JANKCC).
1.3 Unless otherwise specified, maximum ratings (TA = +25°C).
PT
TSTG and Top
IZM 1/
Power derating
above TA = +25°C
mW/
C
3.33
mW
500
1/
C
mA dc
70
-55 to +175
To guarantee voltage temperature stability, it is necessary to maintain the proper Iz as specified in paragraph 1.4.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/452E
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T
A
= +25°C.
V
Z
Type
1/
Z
Z
I
Z
= 0.5.mA dc
V
Z
I
Z
= 0.5 mA dc
Min
Volts
6.08
“
“
“
“
V
Z
I
Z
= 1.0 mA dc
Min
Volts
6.08
“
“
“
“
V
Z
I
Z
= 2.0 mA dc
Min
Volts
6.08
“
“
“
“
V
Z
I
Z
= 4.0 mA dc
Min
Volts
6.08
“
“
“
“
Max
Volts
6.72
“
“
“
“
Max
Volts
6.72
“
“
“
“
Max
Volts
6.72
“
“
“
“
Max
Volts
6.72
“
“
“
“
I
R
V
R
= 3.0 V
(voltage-
temperature
stability)
V dc
0.100
0.050
0.020
0.010
0.005
V
Z
1N4565A-1, 1N4565AUR-1
1N4566A-1, 1N4566AUR-1
1N4567A-1, 1N4567AUR-1
1N4568A-1, 1N4568AUR-1
1N4569A-1, 1N4569AUR-1
ohms
200
“
“
“
“
Z
Z
I
Z
= 1.0 mA dc
A
2.0
“
“
“
”
I
R
V
R
= 3.0 V
Type
1/
(voltage-
temperature
Stability)
V dc
0.100
0.050
0.020
0.010
0.005
V
Z
1N4570A-1, 1N4570AUR-1
1N4571A-1, 1N4571AUR-1
1N4572A-1, 1N4572AUR-1
1N4573A-1, 1N4573AUR-1
1N4574A-1, 1N4574AUR-1
ohms
100
“
“
“
“
Z
Z
I
Z
= 2.0 mA dc
A
2.0
“
“
“
”
I
R
V
R
= 3.0 V
Type
1/
(voltage-
temperature
stability)
V dc
0.100
0.050
0.020
0.010
0.005
V
Z
1N4575A-1, 1N4575AUR-1
1N4576A-1, 1N4576AUR-1
1N4577A-1, 1N4577AUR-1
1N4578A-1, 1N4578AUR-1
1N4579A-1, 1N4579AUR-1
ohms
50
“
“
“
“
Z
Z
I
Z
= 4.0 mA dc
A
2.0
“
“
“
”
I
R
V
R
= 3.0 V
Type
1/
(voltage-
temperature
Stability)
V dc
0.100
0.050
0.020
0.010
0.005
1N4580A-1, 1N4580AUR-1
1N4581A-1, 1N4581AUR-1
1N4582A-1, 1N4582AUR-1
1N4583A-1, 1N4583AUR-1
1N4584A-1, 1N4584AUR-1
1/
ohms
25
“
“
“
“
A
2.0
“
“
“
”
Electrical characteristics and test conditions for " A-1, and AUR-1" devices are identical.
2
MIL-PRF-19500/452E
2.
APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not
include documents cited in other sections of this specification or recommended for additional information or as examples. While
every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2
Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of
the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see
6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Performance Specification, Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for
listing on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.2 Associated specification. The individual item performance requirements shall be in accordance with MIL-PRF-19500, and as
specified herein.
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500.
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be specified in
MIL-PRF-19500 and figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750,
and herein.
3.4.2 Diode construction. These devices shall be constructed in a manner and using material which enable the diodes to meet
the applicable requirements of MIL-PRF-19500 and this document.
3.4.3 Dash-one construction. Shall be as specified in MIL-PRF-19500.
3.4.4 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with MIL-PRF-19500.
3.4.5 JANHC and JANKC construction. JANHC and JANKC construction may differ in die size and bonding pad layout provided
the manufacturing technology is identical (example: Diffused junction, alloy junction).
3.4.6 Package outline. This specification contains two standard packages; DO-7 and DO-35. Any user of this specification that
has a specific package outline requirement shall specify their preference in the document purchase order. If package is not
specified, the manufacturer may supply either package (see 6.2).
3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500.
3
MIL-PRF-19500/452E
Dimensions
Symbol
Inches
Min
BD
BL
LD
LL
LL
1
.060
.120
.018
1.000
---
Max
.107
.300
.023
1.500
0.050
Millimeters
Min
1.52
3.05
0.46
25.40
---
Max
2.72
7.62
0.58
38.10
1.27
4
3
3
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.
FIGURE 1. Physical dimensions 1N4565A-1 THROUGH 1N4584A-1,(DO-35 and DO-7).
4
MIL-PRF-19500/452E
Symbol
Dimensions
Inches
Millimeters
Min
Max
.067
.022
.146
Min
1.60
0.41
3.30
Max
1.70
0.56
3.71
BD
ECT
BL
S
.063
.016
.130
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions 1N4565AUR-1 THROUGH 1N4584AUR-1 (DO-213AA).
5
京公网安备 11010802033920号
EEWORLD
