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FQI27N25TU

Description
25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,14 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FQI27N25TU Overview

25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3

FQI27N25TU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-262AA
package instructionI2PAK-3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)600 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)25.5 A
Maximum drain-source on-resistance0.11 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)102 A
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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FQI27N25TU Related Products

FQI27N25TU FQB27N25TM
Description 25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3
Maker Rochester Electronics Rochester Electronics
Parts packaging code TO-262AA TO-263
package instruction I2PAK-3 D2PAK-3
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 600 mJ 600 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (ID) 25.5 A 25.5 A
Maximum drain-source on-resistance 0.11 Ω 0.11 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 102 A 102 A
Certification status COMMERCIAL COMMERCIAL
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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