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FQB27N25TM

Description
25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,14 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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FQB27N25TM Overview

25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3

FQB27N25TM Parametric

Parameter NameAttribute value
MakerRochester Electronics
Parts packaging codeTO-263
package instructionD2PAK-3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)600 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)25.5 A
Maximum drain-source on-resistance0.11 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)102 A
Certification statusCOMMERCIAL
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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FQB27N25TM Related Products

FQB27N25TM FQI27N25TU
Description 25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
Maker Rochester Electronics Rochester Electronics
Parts packaging code TO-263 TO-262AA
package instruction D2PAK-3 I2PAK-3
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 600 mJ 600 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (ID) 25.5 A 25.5 A
Maximum drain-source on-resistance 0.11 Ω 0.11 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 102 A 102 A
Certification status COMMERCIAL COMMERCIAL
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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