ZMY1 THRU ZMY100
SILICON PLANAR POWER ZENER DIODES
Features
Silicon Planar Power Zener Diodes
for use in stabilizing and clipping circuits with high power rating.
The Zener voltages are graded according to the international
E 24 standard. Smaller voltage tolerances on request.
These diodes are also available in DO-41 case with the type
designation ZPY1 thru ZPY100.
These diodes are delivered taped.
Details see Taping.
Weight approx. : 0.25g
DIMENSIONS
DIM
A
B
C
inches
Min.
0.189
0.092
0.016
Max.
0.205
0.100
-
Min.
4.8
2.35
0.4
mm
Max.
5.2
2.55
-
Note
Absolute Maximum Ratings
(T
a
=25
)
Symbols
Values
Units
Zener current see Table "Characteristics"
Power dissipation at T
amb
=25
Junction temperature
Storage temperature range
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
P
tot
T
j
T
S
1
1)
W
175
-55 to +175
Characteristics
Thermal resistance
junction to ambient Air
at
T
amb
=25
Symbols
Min.
Typ.
Max.
Units
R
thA
-
-
170
1)
K/W
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
1
Zener voltage
at I
Z
test
Type
V
Z
V
ZMY1
3)
2)
Dynamic
resistance at I
Z
test f=1KHz
r
ZJ
Temp. coeff. of
Zener volt.
at I
Z
test
VZ
Test current
Reverse voltage
at I
R
=0.5uA
V
R
V
-
-
-
-
>0.7
>1.5
>2.0
>3.0
>5.0
>6.0
>7.0
>7.5
>8.5
>9.0
>10
>11
>12
>14
>15
>17
>18
>20
>22.5
>25
>27
>29
>32
>35
>38
>42
>47
>51
>56
>61
>68
>75
Admissible Zener
current
1)
at t
amb
=25
I
Z
mA
406
203
182
165
150
135
128
110
100
89
82
74
66
60
55
49
44
40
36
34
29
27
25
22
20
18
17
15
14
13
11
10
9
8
7.5
7
I
Z
test
mA
5
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
10
-4
/K
6.5(<8)
4(<7)
4(<7)
4(<7)
2(<5)
1(<2)
1(<2)
1(<2)
1(<2)
1(<2)
2(<4)
2(<4)
3(<7)
3(<7)
4(<9)
4(<9)
5(<10)
5(<11)
6(<12)
7(<13)
8(<14)
9(<15)
10(<20)
11(<20)
25(<60)
30(<60)
35(<80)
40(<80)
45(<100)
50(<100)
60(<130)
65(<130)
70(<160)
80(<160)
120(<250)
130(<250)
-26 ... -23
-7 ... +2
-7 ... +3
-7 ... +4
-6 ... +5
-3 ... +5
-1 ... +6
0 ... 7
0 ... 7
+3 ... +8
+3 ... +8
+5 ... +9
+5 ... +10
+5 ... +10
+5 ... +10
+5 ... +10
+7 ... +11
+7 ... +11
+7 ... +11
+7 ... +11
+7 ... +12
+7 ... +12
+7 ... +12
+7 ... +12
+7 ... +12
+8 ... +12
+8 ... +13
+8 ... +13
+8 ... +13
+8 ... +13
+8 ... +13
+8 ... +13
+8 ... +13
+8 ... +13
+9 ... +13
+9 ... +13
0.65 ... 0.75
3.7 ... 4.1
4.0 ... 4.6
4.4 ... 5.0
4.8 ... 5.4
5.2 ... 6.0
5.8 ... 6.6
6.4 ... 7.2
7.0 ... 7.9
7.7 ... 8.7
8.5 ... 9.6
9.4 ... 10.6
10.4 ... 11.6
11.4 ... 12.7
12.4 ... 14.1
13.8 ...15.8
15.3 ... 17.1
16.8 ... 19.1
18.8 ... 21.2
20.8 ... 23.3
22.8 ... 25.6
25.1 ... 28.9
28 ... 32
31 ... 35
34 ... 38
37 ... 41
40 ... 46
44 ... 50
48 ... 54
52 ... 60
58 ... 66
64 ... 72
70 ... 79
77 ... 88
85 ... 96
94 ... 106
ZMY3.9
ZMY4.3
ZMY4.7
ZMY5.1
ZMY5.6
ZMY6.2
ZMY6.8
ZMY7.5
ZMY8.2
ZMY9.1
ZMY10
ZMY11
ZMY12
ZMY13
ZMY15
ZMY16
ZMY18
ZMY20
ZMY22
ZMY24
ZMY27
ZMY30
ZMY33
ZMY36
ZMY39
ZMY43
ZMY47
ZMY51
ZMY56
ZMY62
ZMY68
ZMY75
ZMY82
ZMY91
ZMY100
Notes:
(1) Valid provided that electrodes are kept at ambient temperature.
(2) Tested with pulses tp=20ms.
(3) The ZMY1 is a silicon diode operated in forward direction. Hence, the index of all characteristics and maximum ratings should be F instead of Z.
Connect the cathode terminal to the negative pole.
2
FPGA/CPLD
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