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BYW51-200

Description
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size50KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BYW51-200 Overview

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB,

BYW51-200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instructionR-PSFM-T3
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.89 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
BYW51-100, BYW51-150, BYW51-200
June 1995
File Number
1412.2
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (t
RR
< 35ns). They use a planar
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-width-
modulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize elec-
trical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
Features
• Ultra Fast Recovery Time (<35ns)
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
• Full-Wave Rectification
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
BYW51-100
BYW51-150
BYW51-200
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
BYW51100
BYW51150
BYW51200
Package
JEDEC TO-220AB
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A1
A2
Absolute Maximum Ratings
Per Junction
BYW51-100
BYW51-150
150
165
100
20
8
100
20
-40 + 150
260
BYW51-200
200
220
100
20
8
100
20
-40 + 150
260
UNITS
V
V
A
A
A
A
W
o
C
o
C
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . V
RRM
Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . V
RSM
Repetitive Peak Surge Current. . . . . . . . . . . . . . l
FRM
, t
P
< 10
µ
s
Nonrepetitive Peak Surge Current . . . . . . . . . . . . l
F
(RMS), Total
Average Rectified forward Current . . . . . . . . . . . . . . l
F(AV)
, Total
T
C
= +125
o
C, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . l
FSM
t
P
= 10ms, Sinusoidal
Maximum Power Dissipation . . . . . . . . . . . . .P
D
, T
C
= +125
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
T
L
(Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance >
1
/
8
in. (3.17mm) From Case For 10s max.
100
110
100
20
8
100
20
-40 + 150
260
©2001 Fairchild Semiconductor Corporation
BYW51-100, BYW51-150, BYW51-200, Rev. A

BYW51-200 Related Products

BYW51-200 BYW51-150
Description Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, Rectifier Diode, 1 Phase, 2 Element, 8A, 150V V(RRM), Silicon, TO-220AB,
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
package instruction R-PSFM-T3 R-PSFM-T3
Reach Compliance Code compliant unknown
Other features FREE WHEELING DIODE FREE WHEELING DIODE
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.89 V 0.89 V
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 150 V
Maximum reverse recovery time 0.035 µs 0.035 µs
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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