BYW51-100, BYW51-150, BYW51-200
June 1995
File Number
1412.2
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (t
RR
< 35ns). They use a planar
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-width-
modulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize elec-
trical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
Features
• Ultra Fast Recovery Time (<35ns)
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
• Full-Wave Rectification
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
BYW51-100
BYW51-150
BYW51-200
PACKAGE
TO-220AB
TO-220AB
TO-220AB
BRAND
BYW51100
BYW51150
BYW51200
Package
JEDEC TO-220AB
ANODE 1
CATHODE
ANODE 2
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A1
A2
Absolute Maximum Ratings
Per Junction
BYW51-100
BYW51-150
150
165
100
20
8
100
20
-40 + 150
260
BYW51-200
200
220
100
20
8
100
20
-40 + 150
260
UNITS
V
V
A
A
A
A
W
o
C
o
C
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . V
RRM
Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . V
RSM
Repetitive Peak Surge Current. . . . . . . . . . . . . . l
FRM
, t
P
< 10
µ
s
Nonrepetitive Peak Surge Current . . . . . . . . . . . . l
F
(RMS), Total
Average Rectified forward Current . . . . . . . . . . . . . . l
F(AV)
, Total
T
C
= +125
o
C, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . l
FSM
t
P
= 10ms, Sinusoidal
Maximum Power Dissipation . . . . . . . . . . . . .P
D
, T
C
= +125
∞
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
T
L
(Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance >
1
/
8
in. (3.17mm) From Case For 10s max.
100
110
100
20
8
100
20
-40 + 150
260
©2001 Fairchild Semiconductor Corporation
BYW51-100, BYW51-150, BYW51-200, Rev. A
BYW51-100, BYW51-150, BYW51-200
Electrical Specifications
Per Junction
TEST CONDITIONS
VOLTAGE
V
R
V
100
150
200
100
100
150
200
V
F
25
100
t
RR
R
θ
JC
, Per Leg
R
θ
JC
, Total
R
θ
JA
C
J
NOTE:
1. dI
F
/dt > 50A/
µ
s, I
RM
(rec) <1A,
IRR =
0.25A.
25
25
-
-
-
-
-
-
10
CURRENT
i
F
A
-
-
-
-
-
-
8
8
1 (Note 1)
-
-
-
0
BYW51-100
MIN
-
-
-
-
-
-
-
-
-
-
-
-
MAX
5
-
-
1
-
-
0.95
0.89
35
2.5
1.3
60
LIMITS
BYW51-150
MIN
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
5
-
-
1
-
0.95
0.89
35
2.5
1.3
60
BYW51-200
MIN
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
5
-
-
1
0.95
0.89
35
2.5
1.3
60
UNITS
µ
A
µ
A
µ
A
mA
mA
mA
V
V
ns
o
C/W
o
C/W
o
C/W
SYMBOL
I
R
T
J
o
C
25
All types (typ.) 40
pF
©2001 Fairchild Semiconductor Corporation
BYW51-100, BYW51-150, BYW51-200, Rev. A
BYW51-100, BYW51-150, BYW51-200
Typical Performance Curves
160
I
FSM
, PEAK SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
REAPPLIED V
R
(PK) = V
RM
140
R
θJC
, THERMAL IMPEDANCE (
o
C/W)
100
120
100
80
T
J
= 100
o
C
60
40
20
0
1
10
0
1
10
100
1000
t
P
, PULSE WIDTH (ms)
N, NUMBER OF HALF-CYCLES IN SURGE DURATION AT 50Hz
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
FIGURE 1. PEAK SURGE FORWARD CURRENT vs SURGE
DURATION
100
FIGURE 2. THERMAL IMPEDANCE vs PULSE WIDTH
(PER JUNCTION)
10,000
T
J
= +150
o
C
I
R
, REVERSE CURRENT (µA)
1000
T
J
= +125
o
C
T
J
= -55
o
C
T
J
= +25
o
C
I
F
, FORWARD CURRENT (A)
10
T
J
= +100
o
C
T
J
= +125
o
C
100
T
J
= +100
o
C
10
1
T
J
= +150
o
C
1
T
J
= +25
o
C
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0.01
0.1
1
10
100
1000
V
F
, FORWARD VOLTAGE DROP (V)
V
RM
, VOLTAGE IN % RATED V
RRM
(V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
©2001 Fairchild Semiconductor Corporation
BYW51-100, BYW51-150, BYW51-200, Rev. A
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H