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ZMY100G

Description
9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size51KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
Download Datasheet Parametric View All

ZMY100G Overview

9.1 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

ZMY100G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDIOTEC
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance250 Ω
Humidity sensitivity level1
Number of components1
Maximum operating temperature175 °C
Peak Reflow Temperature (Celsius)260
Maximum power dissipation1 W
Nominal reference voltage100 V
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
ZMY 1 G … ZMY 100 G (1.0 W)
Surface mount Silicon-Zener Diodes
(planar technology)
Version 2004-05-13
Maximum power dissipation
Maximale Verlustleistung
2.5
Planare Si-Zener-Dioden
für die Oberflächenmontage
1.0 W
1…100 V
DO-213AB
0.12 g
see page 18
siehe Seite 18
Nominal Z-voltage – Nominale Z-Spannung
Glass case MELF
Glasgehäuse MELF
Weight approx. – Gewicht ca.
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
5.0
Type
Typ
Dimensions / Maße in mm
Standard Zener voltage tolerance is graded to the international E 24 (~5%) standard.
Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung gestuft nach der
internationalen Reihe E 24 (~5%). Andere Toleranzen oder höhere Arbeitsspannungen auf
Anfrage.
Advantages of planar Zener-Diodes:
Low junction capacity
Low leakage current I
R
0.4
0.4
Vorteile der planaren Zener-Dioden:
Niedrige Sperrschichtkapazität
Niedriger Sperrstrom I
R
Maximum ratings and Characteristics
Grenz- und Kennwerte
Power dissipation – Verlustleistung
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
T
A
= 25°C
P
tot
T
j
T
S
R
thA
1.0 W
1
)
– 50...+175°C
– 50...+175°C
< 150 K/W
1
)
1
) Mounted on P.C. board with 50 mm
2
copper pads at each terminal
Montage auf Leiterplatte mit 50 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses – Gemessen mit Impulsen
3
) The ZMY 1 G is a diode operated in forward. Hence, the index of all parameters should be “F” instead of “Z”.
The cathode, indicated by a white ring is to be connected to the negative pole.
Die ZMY 1 G ist eine in Durchlaß betriebene Si-Diode. Daher ist bei allen Kenn- und Grenzwerten der Index
“F” anstatt “Z” zu setzten. Die durch den weißen Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden.
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