BFN17 datasheet, PDF - EEWORLD Datasheet

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BFN17: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size22KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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BFN17 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

BFN17 Parametric

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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Not Recommended for New Design

Please Use DZTA92

SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 - OCTOBER 1995

7

BFN17

C

COMPLEMENTARY TYPE -

PARTMARKING DETAILS -

BFN16

DG

E

C

B

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

VALUE

-250

-5

-500

-200

-100

-1

-65 to +150

UNIT

V

mA

W

°C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

MIN.

-250

-5

-100

-20

-100

-0.4

-0.9

25

40

Typ.100

Typ. 2.5

MHz

pF

MAX.

UNIT

V

nA

µA

nA

V

CONDITIONS.

I

C

=-100µA

I

C

=-1mA

I

E

=-100µA

V

CB

=-250V

V

CB

=-250V, T

amb

=150 °C

V

EB

=-3V

I

C

=-20mA, I

B

=-2mA

I

C

=-20mA, I

B

=-2mA

I

C

=-1mA, V

CE

=-10V*

I

C

=-10mA, V

CE

=-10V*

I

C

=-30mA, V

CE

=-10V*

I

C

=-20mA, V

CE

=-10V*

f=20MHz

V

CB

=-30V,f=1MHz

Collector Cut-Off Current I

CBO

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Saturation

Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA92 datasheet

3 - 43

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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