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MJE2801T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size99KB,2 Pages
ManufacturerInchange Semiconductor
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MJE2801T Overview

Transistor

MJE2801T Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
MJE2801T
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 60V(Min)
·High
DC Current Gain-
:
h
FE
= 25-100@I
C
= 3A
·Complement
to Type MJE2901T
APPLICATIONS
·Designed
for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
60
60
4
10
5
75
150
-55~150
UNIT
V
V
V
A
A
W
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.67
UNIT
℃/W
isc Website:www.iscsemi.cn
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