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MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
October 2009
MPSA42 / MMBTA42 / PZTA42
NPN High Voltage Amplifier
Features
• This device is designed for application as a video output to drive color CRT and other high voltage applications.
• Sourced from Process 48.
MPSA42
MMBTA42
C
C
PZTA42
E
C
E
B
TO-92
E B C
B
SOT-23
Mark: 1D
SOT-223
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
T
A
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
300
300
6
500
-55 to +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
A
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
MPSA42
625
5.0
83.3
200
515
125
*MMBTA42
240
1.92
**PZTA42
1000
8.0
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4PCB 1.6”
×
1.6”
×
0.06”.
** Device mounted on FR-4 PCB 36 mm
×
18 mm
×
1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
1
www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
T
A
=25°C unless otherwise noted
Parameter
Test Condition
Min.
300
300
6
Max.
Units
V
V
V
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 100
μA,
I
E
= 0
I
E
= 100
μA,
I
C
= 0
V
CB
= 200 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 30 mA
I
C
= 20 mA, I
B
= 2.0 mA
I
C
= 20 mA, I
B
= 2.0 mA
I
C
= 10mA, V
CE
= 20V, f = 100MHz
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
0.1
0.1
25
40
40
0.5
0.9
50
3.0
μA
μA
On Characteristics*
h
FE
V
CE(sat)
V
BE(sat)
f
T
Ccb
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
V
V
MHz
pF
Small Signal Characteristics
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
2
www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
Typical Performance Characteristics
V
CE(SAT)
- COLLECTOR-EMITTER VOLTAGE [V]
140
125 C
120
o
100
V
CE
=10V
o
100 C
75 C
25 C
o
o
h
FE
- DC CURRENT GAIN
100
80
60
10
1
-40 C
40
20
0
1
10
100
1000
o
100 C
T
A
= 125 C
0.1
o
o
-40 C
25 C
0.01
1
10
o
o
75 C
o
100
1000
I
C
- COLLECTOR CURRENT [mA]
I
C
- COLLECTOR CURRENT [mA]
Figure 1. DC Current Gain vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1.2
1.0
V
BE(SAT)
- BASE-EMITTER VOLTAGE [V]
V
BE(ON)
- BASE-EMITTER VOLTAGE [V]
-40 C
0.8
o
1.0
T
A
= -40 C
T
A
= 25 C
o
o
25 C
o
o
0.8
0.6
125 C
100 C
75 C
o
o
0.6
T
A
= 75 C
0.4
o
0.4
T
A
= 125 C
0.2
o
T
A
= 100 C
o
0.2
1
10
100
0.0
1
10
100
1000
I
C
- COLLECTOR CURRENT [mA]
I
C
- COLLECTOR CURRENT [mA]
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter ON Voltage
vs Collector Current
100
CAPACITANCE [pF]
C
IB
10
C
OB
1
0
2
4
6
8
10
12
14
16
18
20
REVERSE BIAS VOLTAGE [V]
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
3
www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
Typical Performance Characteristics
(Continued)
1.0
SOT-223
P
D
- POWER DISSIPATION [W]
0.8
0.6
TO-92
0.4
0.2
SOT-23
0.0
0
25
50
75
100
o
125
150
T
C
- CASE TEMPERATURE [ C]
Figure 7. Power Dissipation
vs Ambient Temperature
© 2009 Fairchild Semiconductor Corporation
MPSA42 / MMBTA42 / PZTA42 Rev. B2
4
www.fairchildsemi.com
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