TC2054/2055/2186
50 mA, 100 mA, and 150 mA CMOS LDOs
with Shutdown and Error Output
Features
• Low Supply Current (55 µA Typical) for Longer
Battery Life
• Low Dropout Voltage: 140 mV (Typical) @
150 mA
• High Output Voltage Accuracy: ±0.4% (Typical)
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Fast Shutdown Reponse Time: 60 µs (Typical)
• Overcurrent and Overtemperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 5.0V
General Description
The TC2054, TC2055 and TC2186 are high accuracy
(typically ±0.4%) CMOS upgrades for older (bipolar)
low dropout regulators. Designed specifically for
battery-operated systems, the devices’ total supply
current is typically 55 µA at full load (20 to 60 times
lower than in bipolar regulators).
The devices’ key features include low noise operation,
low dropout voltage – typically 45 mV (TC2054); 90 mV
(TC2055); and 140 mV (TC2186) at full load - and fast
response to step changes in load. An error output
(ERROR) is asserted when the devices are
out-of-regulation (due to a low input voltage or
excessive output current). Supply current is reduced to
0.5 µA (maximum) and both V
OUT
and ERROR are
disabled when the shutdown input is low. The devices
also incorporate overcurrent and overtemperature
protection.
The TC2054, TC2055 and TC2186 are stable with a
low esr ceramic output capacitor of 1 µF and have a
maximum output current of 50 mA, 100 mA and
150 mA, respectively. This LDO Family also features a
fast response time (60 µs typically) when released from
shutdown.
Applications
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular / GSMS / PHS Phones
Pagers
Package Type
5-Pin SOT-23A
Top View
V
OUT
5
ERROR
4
TC2054
TC2055
TC2186
1
1M
Typical Application
1 V
IN
1 µF
2
V
OUT
5
V
IN
V
OUT
1 µF
GND
TC2054
TC2055
TC2186
4
2
3
V
IN
ERROR
GND SHDN
3
SHDN
ERROR
Shutdown Control
(from Power Control Logic)
©
2009 Microchip Technology Inc.
DS21663D-page 1
TC2054/2055/2186
NOTES:
DS21663D-page 2
©
2009 Microchip Technology Inc.
TC2054/2055/2186
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods my
affect device reliability.
Absolute Maximum Ratings †
Input Voltage ......................................................... 6.5V
Output Voltage ............................... (-0.3) to (V
IN
+ 0.3)
Operating Temperature .................. -40°C < T
J
< 125°C
Storage Temperature ......................... -65°C to +150°C
Maximum Voltage on Any Pin ........ V
IN
+0.3V to -0.3V
ELECTRICAL SPECIFICATIONS
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE
type specifications apply for junction temperature of -40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Sym
V
IN
I
OUTMAX
Min
2.7
50
100
150
Output Voltage
V
OUT
Temperature
Coefficient
Line Regulation
Load Regulation
V
OUT
TCV
OUT
ΔV
OUT
/
ΔV
IN
ΔV
OUT
/
V
OUT
—
—
—
-1.0
-2.0
—
—
—
—
Supply Current
Shutdown Supply Current
Power Supply Rejection
Ratio
Output Short Circuit Current
Note 1:
2:
3:
4:
5:
6:
I
IN
I
INSD
PSRR
I
OUTSC
—
—
—
160
Typ
—
—
—
—
20
40
0.05
0.33
0.43
2
45
90
140
55
0.05
50
300
Max
6.0
—
—
—
V
—
—
0.5
+1.0
+2.0
—
70
140
210
80
0.5
—
—
µA
µA
dB
mA
TC2185
Note 7
SHDN = V
IH
, I
L
=0
SHDN = 0V
F
RE
≤
100 kHz
V
OUT
= 0V
mV
%
%
(V
R
+ 1V) < V
IN
< 6V
TC2054;TC2055 I
L
= 0.1 mA to I
OUTMAX
TC2186
Note 6
Dropout Voltage,
Note 7
V
IN
– V
OUT
I
L
= 100 µA
I
L
= 50 mA
TC2015; TC2185 I
L
= 100 mA
I
L
= 150 mA
I
L
= 0.1 mA to I
OUTMAX
Units
V
mA
Note 1
TC2054
TC2055
TC2186
Note 2
ppm/°C
Note 3
Conditions
V
R
- 2.0% V
R
± 0.4% V
R
+ 2.0%
The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
TCV
OUT
=
6
(
V
–
V
) ×
10
OUTMAX
OUTMIN
-----------------------------------------------------------------------------------------
V
× ΔT
OUT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
7:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
8:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
9:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
).
10:
Hysteresis voltage is referenced by V
R
.
11:
Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
©
2009 Microchip Technology Inc.
DS21663D-page 3
TC2054/2055/2186
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE
type specifications apply for junction temperature of -40°C to +125°C.
Parameter
Thermal Regulation
Thermal Shutdown Die
Temperature
Output Noise
Response Time
(from Shutdown Mode)
SHDN Input
SHDN Input High Threshold
SHDN Input Low Threshold
ERROR OUTPUT
Minimum V
IN
Operating
Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
V
OUT
to ERROR Delay
Resistance from ERROR to
GND
Note 1:
2:
3:
4:
5:
6:
V
INMIN
V
OL
V
TH
V
HYS
t
DELAY
R
ERROR
1.0
—
—
—
—
—
—
—
0.95 x V
R
50
2
126
—
400
—
—
—
—
V
mV
V
mV
ms
Ω
I
OL
= 0.1 mA
1 mA Flows to ERROR,
I
OL
= 1 mA, V
IN
= 2V
See
Figure 4-2
Note 10
V
OUT
from V
R
= 3V to 2.8V
V
DD
= 2.5V, V
OUT
= 2.5V
V
IH
V
IL
60
—
—
—
—
15
%V
IN
%V
IN
V
IN
= 2.5V to 6.0V
V
IN
= 2.5V to 6.0V
Sym
ΔV
OUT/
ΔP
D
T
SD
eN
t
R
Min
—
—
—
—
Typ
0.04
160
600
60
Max
—
—
—
—
Units
V/W
°C
nV /
√Hz
µs
I
L
= I
OUTMAX
, F = 10 kHz
V
IN
= 4V
C
IN
= 1 µF, C
OUT
= 10 µF
I
L
= 0.1 mA,
Note 11
Note 8
Conditions
The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
TCV
OUT
=
6
(
V
–
V
) ×
10
OUTMAX
OUTMIN
-----------------------------------------------------------------------------------------
V OUT
× ΔT
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
7:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
8:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
9:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
).
10:
Hysteresis voltage is referenced by V
R
.
11:
Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
DD
= +2.7V to +6.0V and V
SS
= GND.
Parameters
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
θ
JA
—
255
—
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS21663D-page 4
©
2009 Microchip Technology Inc.
TC2054/2055/2186
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
0
-20
PSRR (dB)
-40
-60
-80
-100
10
10
100
100
1000
1,000
10k
10,000
100k
100,000
1M
1,000,000
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 100 µA
C
OUT
= 1 µF Ceramic
0
-20
PSRR (dB)
-40
-60
-80
-100
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 150 mA
C
OUT
= 10 µF Ceramic
10
10
100
100
1000
1,000
10k
10,000
100k
100,000
1M
1,000,000
f (Hz)
f (Hz)
FIGURE 2-1:
Ratio.
Power Supply Rejection
FIGURE 2-4:
Ratio.
0
Power Supply Rejection
0
-20
PSRR (dB)
-40
-60
-80
-100
10
10
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
-20
PSRR (dB)
-40
-60
-80
-100
V
INDC
= 4V
V
INAC
= 100 mV
p-p
V
OUTDC
= 3V
I
OUT
= 150 mA
C
OUT
= 1 µF Ceramic
100
100
1,000
1000
10,000
10k
100,000
100k
1,000,000
1M
I
OUT
= 150 mA
C
OUT
= 10 µF Tantalum
10
10
100
100
1000
1,000
10k
10,000
100k
100,000
1M
1,000,000
f (Hz)
f (Hz)
FIGURE 2-2:
Ratio.
Power Supply Rejection
FIGURE 2-5:
Ratio.
0.160
Power Supply Rejection
10
Noise (µV/
√
Hz)
1
DOV (V)
V
OUT
= 1.8V
0.140
0.120
C
OUT
= 1 µF
0.100
0.080
0.060
T = 130°C
T = -45°C
T = 25°C
0.1
0.01
0.001
0.01
0.040
0.020
0.1
1
10
Frequency (kHz)
100
1000
0.000
0
50
100
150
I
LOAD
(mA)
FIGURE 2-3:
Output Noise vs. Frequency.
FIGURE 2-6:
Dropout Voltage vs. I
LOAD
.
©
2009 Microchip Technology Inc.
DS21663D-page 5
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