BC846...-BC850...
NPN Silicon AF Transistors
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 Hz and 15 kHz
•
Complementary types:
BC856...-BC860...(PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
1
Pb-containing
package may be available upon special request
1
2010-06-28
BC846...-BC850...
Type
BC846A
BC846B
BC846BW
BC847A
BC847B
BC847BF*
BC847BL3
BC847BW
BC847C
BC847CW
BC848A
BC848B
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
BC850B
BC850BW
BC850C
BC850CW
* Not for new design
Marking
1As
1Bs
1Bs
1Es
1Fs
1Fs
1F
1Fs
1Gs
1Gs
1Js
1Ks
1K
1Ks
1Ls
1Ls
2Bs
2Cs
2Cs
2Fs
2Fs
2Gs
2Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
SOT323
SOT23
SOT23
TSFP-3
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
2
2010-06-28
BC846...-BC850...
Maximum Ratings
Parameter
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current,
t
p
≤
10 ms
Total power dissipation-
T
S
≤
71 °C, BC846-BC850
T
S
≤
128 °C, BC847F
T
S
≤
135 °C, BC847L3-BC848L3
T
S
≤
124 °C, BC846W-BC850W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BC846-BC850
BC847F
BC847L3-BC848L3
BC846W-BC850W
1
For
Symbol
V
CEO
Value
65
45
30
Unit
V
V
CES
80
50
30
V
CBO
80
50
30
V
EBO
6
6
6
I
C
I
CM
P
tot
330
250
250
250
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
105
Unit
K/W
°C
100
200
mW
mA
calculation of
R
thJA
please refer to Application Note Thermal Resistance
3
2010-06-28
BC846...-BC850...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BC846...
I
C
= 10 mA,
I
B
= 0 , BC847..., BC850...
I
C
= 10 mA,
I
B
= 0 , BC848..., BC849...
65
45
30
V
(BR)CBO
-
-
-
-
-
-
6
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC846...
I
C
= 10 µA,
I
E
= 0 , BC847..., BC850...
I
C
= 10 µA,
I
E
= 0 , BC848..., BC849...
80
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 0 ,
I
C
= 10 µA
-
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
0.015
5
140
250
480
180
290
520
-
-
-
-
-
-
220
450
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
110
200
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
90
200
700
900
660
-
250
600
-
-
700
770
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse test: t < 300µs; D < 2%
580
-
4
2010-06-28
BC846...-BC850...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Open-circuit reverse voltage transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Short-circuit forward current transf. ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz,
h
FE
-grp.C
Noise figure
I
C
= 200 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 2 kΩ, BC849..., BC850...
Equivalent noise voltage
I
C
= 200 µA,
V
CE
= 5 V,
R
S
= 2 kΩ,
f
= 10 ... 50 Hz , BC850...
V
n
-
-
0.135 µV
F
h
22e
-
-
-
-
18
30
60
1.2
-
-
-
4
dB
h
21e
-
-
-
200
330
600
-
-
-
µS
h
12e
-
-
-
1.5
2
3
-
-
-
h
11e
-
-
-
2.7
4.5
8.7
-
-
-
10
-4
kΩ
C
eb
-
9
-
f
T
C
cb
-
-
250
0.95
-
-
MHz
pF
typ.
max.
Unit
5
2010-06-28