Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
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-
© Nexperia B.V. (year). All rights reserved.
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NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
TYPE
NUMBER
BC859W
BC859BW
BC859CW
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING
CODE
4D∗
4B∗
4C∗
TYPE
NUMBER
BC860W
BC860BW
BC860CW
MARKING
CODE
4H∗
4F∗
4G∗
1
Top view
handbook, halfpage
BC859W; BC860W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BC859W
BC860W
V
CEO
collector-emitter voltage
BC859W
BC860W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
2
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−30
−45
−5
−100
−200
−200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
−30
−50
V
V
MIN.
MAX.
UNIT
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
V
CEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA; note 1
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
=
−200 μA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−30
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V;
see Figs 2 and 3
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC859W; BC860W
VALUE
625
UNIT
K/W
MIN.
TYP.
−
−
−
−
−
−
−
−
−
−
−
10
−
−
−
MAX.
−15
−4
−100
800
475
800
−300
−650
750
820
5
−
−
4
4
UNIT
nA
μA
nA
220
220
420
−
−
600
−
−
−
100
−
−
mV
mV
mV
mV
pF
pF
MHz
dB
dB
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC859W; BC860W
handbook, full pagewidth
400
MBH727
hFE
VCE =
−5
V
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC859BW; BC860BW.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
600
MBH728
hFE
500
VCE =
−5
V
400
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC859CW; BC860CW.
Fig.3 DC current gain; typical values.
1999 Apr 12
4
Microcontroller MCU
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