TC74VHC20F/FN/FT/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC20F,TC74VHC20FN,TC74VHC20FT,TC74VHC20FK
Dual 4-Input NAND Gate
The TC74VHC20 is an advanced high speed CMOS 4-INPUT
NAND GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The internal circuit is composed of 3 stages including a buffer
output, which provide high noise immunity and stable output.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74VHC20F
TC74VHC20FN
Features
•
•
•
•
•
•
•
High speed: t
pd
=
3.3 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
2
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
pLH
≈
t
pHL
Wide operating voltage range: V
CC
(opr)
=
2 to 5.5 V
Pin and function compatible with 74ALS20
TC74VHC20FT
TC74VHC20FK
Weight
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
VSSOP14-P-0030-0.50
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
: 0.02 g (typ.)
1
2008-05-01
TC74VHC20F/FN/FT/FK
Pin Assignment
IEC Logic Symbol
1A
1B
1C
1D
2A
2B
2C
2D
(1)
(2)
(4)
(5)
(9)
(10)
(12)
(13)
(8)
2Y
&
(6)
1Y
1A
1B
NC
1C
1D
1Y
GND
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
CC
2D
2C
NC
2B
2A
2Y
Truth Table
Inputs
A
L
X
X
X
H
B
X
L
X
X
H
C
X
X
L
X
H
D
X
X
X
L
H
Output
Y
H
H
H
H
L
X: Don’t care
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+ 0.5
−20
±20
±25
±50
180
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2008-05-01
TC74VHC20F/FN/FT/FK
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
−40
to 85
0 to 100 (V
CC
= 3.3 ± 0.3 V)
0 to 20 (V
CC
= 5 ± 0.5 V)
Unit
V
V
V
°C
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Electrical Characteristics
DC Characteristics
Test Condition
Characteristics
Symbol
V
CC
(V)
2.0
High-level input
voltage
V
IH
―
3.0
to
5.5
2.0
Low-level input
voltage
V
IL
―
3.0
to
5.5
2.0
High-level output
voltage
V
IN
= V
IH
or
V
IL
I
OH
=
−50
μA
3.0
4.5
I
OH
=
−4
mA
I
OH
=
−8
mA
I
OL
= 50
μA
Low-level output
voltage
V
OL
V
IN
= V
IH
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage
current
Quiescent supply
current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
―
―
1.9
2.9
4.4
2.58
3.94
―
―
―
―
―
―
―
―
―
2.0
3.0
4.5
―
―
0.0
0.0
0.0
―
―
―
―
Min
1.50
V
CC
×
0.7
Ta = 25°C
Typ.
―
―
Max
―
―
Ta =
−40
to 85°C
Min
1.50
V
CC
×
0.7
Max
―
―
Unit
V
0.50
V
CC
×
0.3
―
―
―
―
―
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
―
―
1.9
2.9
4.4
2.48
3.80
―
―
―
―
―
―
―
0.50
V
CC
×
0.3
―
―
―
―
―
0.1
0.1
0.1
0.44
0.44
±1.0
20.0
μA
μA
V
V
V
V
OH
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2008-05-01
TC74VHC20F/FN/FT/FK
AC Characteristics
(input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
3.3 ± 0.3
―
5.0 ± 0.5
―
(Note)
C
L
(pF)
15
50
15
50
Min
―
―
―
―
―
―
Ta = 25°C
Typ.
4.6
7.1
3.3
4.8
4
19
Max
6.6
10.1
5.0
7.0
10
―
Ta =
−40
to 85°C
Min
1.0
1.0
1.0
1.0
―
―
Max
8.0
11.5
6.0
8.0
10
―
pF
pF
ns
Unit
Propagation delay
time
t
pLH
t
pHL
Input capacitance
Power dissipation
capacitance
C
IN
C
PD
Note: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
= C
PD
·V
CC
·f
IN
+ I
CC
/2 (per gate)
Input Equivalent Circuit
INPUT
4
2008-05-01
Embedded System
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