BL
FEATURES
power rating.
GALAXY ELECTRICAL
ZENER DIODES
DL4728 - - - DL4764
POWER DISSIPATION: 1.0 W
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
MELF
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
MECHANICAL DATA
Case:MELF, glass case
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.25 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation @ T
amb
50
P
Diss
I
Z
T
J
T
s
R
ThJA
1.0
1)
P
V
/V
Z
175
1)
W
Z-current
mA
Junction temperature
Storage temperature range
-55---+175
170
Junction ambient I=9.5mm(3/8 ), T
L
=constant
K/W
SYMBOL
Forw ard voltage at I
F
=200mA
MIN
TYP
MAX
1.2
UNIT
V
V
F
1)Valid provided that electrodes re kept at ambient temperature.
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Document Number 0284021
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS
Nominal
zener
voltage 1)
Type
V z@I
ZT
(V )
DL4728
DL4729
DL4730
DL4731
DL4732
DL4733
DL4734
DL4735
DL4736
DL4737
DL4738
DL4739
DL4740
DL4741
DL4742
DL4743
DL4744
DL4745
DL4746
DL4747
DL4748
DL4749
DL4750
DL4751
DL4752
DL4753
DL4754
DL4755
DL4756
DL4757
DL4758
DL4759
DL4760
DL4761
DL4762
DL4763
DL4764
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
I
ZT
(mA )
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
I
ZT
@Z
ZT
(Ω)
10
10
9
9
8
7
5
2
3.5
4.0
4.5
5.0
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
Z
ZK
@I
ZK
(Ω)
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
I
ZK
(m A)
(TA=25
)
Max surge
current
8.3ms
I
R
@T
amb
=25
(mA )
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
Maximum
regulator
current 2)
I
ZM
@T
amb
=50
(mA )
276
252
234
217
193
178
462
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
Test
current
Maximum dynamic impedance
Maximum reverse
leakage current
I
R
(μA )
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
+1
@V
R
(V )
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
79.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (T
L
) at 30
2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient tem perature.
*)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% V
ZMIN
35nA at T
J
25
,9.5m m (3/8")f rom the D iode body .
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Document Number 0284021
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- BREAKDOWN CHARACTERISTICS
DL4728
-
-
-
DL4764
mA
100
5
10
15
20
25
30 V
80
I
Z
60
40
20
0
DL4731
DL4732
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
W
1.0
DL4728
DL4733
DL4735
DL4742
DL4744
DL4747
DL4739
DL4741
DL4748
DL4749
DL4750
V
Z
0.8
P
tot
0.6
0.4
0.2
0
0
100
T
amb
200
℃
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Document Number 0284021
BL
GALAXY ELECTRICAL
3.
Microchip MCU
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