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MA4ST563A-120

Description
L-KU BAND, 8.15pF, 22V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size101KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA4ST563A-120 Overview

L-KU BAND, 8.15pF, 22V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

MA4ST563A-120 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.101
Nominal diode capacitance8.15 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandL BAND TO KU BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor400
Maximum reverse current0.05 µA
Reverse test voltage20 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT
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