BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1930 to 1990
V
DS
(V)
28
P
L(AV)
(W)
35.5
G
p
(dB)
16.5
η
D
(%)
31
IMD3
(dBc)
−37
[1]
ACPR
(dBc)
−40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 1000 mA:
x
Average output power = 35.5 W
x
Power gain = 16.5 dB (typ)
x
Efficiency = 31 %
x
IMD3 =
−37
dBc
x
ACPR =
−40
dBc
s
Easy power control
s
Integrated ESD protection
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (1800 MHz to 2000 MHz)
s
Internally matched for ease of use
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLC6G20-140 (SOT895-1)
1
3
2
2
3
sym112
1
BLC6G20LS-140 (SOT896-1)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Package
Name
BLC6G20-140
-
BLC6G20LS-140 -
Description
plastic flanged cavity package; 2 mounting slots; 2 leads
plastic earless flanged cavity package; 2 leads
Version
SOT895-1
SOT896-1
Type number
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
+150
225
Unit
V
V
°C
°C
<tbd>
A
BLC6G20-140_6G20LS-140_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
2 of 9
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
5. Thermal characteristics
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
Conditions
Type
Min
Typ
Max
0.52
Unit
K/W
thermal resistance
T
case
= 80
°C;
BLC6G20-140
from junction to case P
L
= 35.5 W BLC6G20LS-140
<tbd> <tbd> <tbd>
K/W
<tbd>
0.43
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 216 mA
V
DS
= 28 V; I
D
= 950 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
Typ
-
Max
-
Unit
V
<tbd>
2
-
32
-
-
-
-
-
39
-
13.5
0.07
<tbd>
V
5
-
450
-
-
µA
A
nA
S
Ω
pF
<tbd> <tbd> <tbd>
V
<tbd>
-
7. Application information
Table 7:
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 1932.5 MHz; f
2
= 1942.5 MHz; f
3
= 1977.5 MHz; f
4
= 1987.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1000 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter
P
L(AV)
G
p
IRL
η
D
IMD3
ACPR
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
P
L(AV)
= 35.5 W
Conditions
Min
-
-
-
-
Typ
35.5
Max
-
-
-
Unit
W
dB
%
<tbd>
16.5
<tbd>
31
−37
−40
<tbd> <tbd>
dB
<tbd>
dBc
<tbd>
dBc
third order intermodulation distortion P
L(AV)
= 35.5 W
7.1 Ruggedness in class-AB operation
The BLC6G20-140 and BLC6G20LS-140 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 1000 mA; P
L
= 140 W (CW); f = 1990 MHz.
BLC6G20-140_6G20LS-140_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
8. Package outline
Plastic flanged cavity package; 2 mounting slots; 2 leads
SOT895-1
D
F
A
D
1
U
1
q
B
C
c
1
L
w1
M
A
M
B
M
H
U
2
3
p
E
1
E
A
2
b
w2
M
C
M
Q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
inches
A
4.1
3.3
b
12.83
12.57
c
0.17
0.14
D
19.9
19.7
D
1
20.42
20.12
E
9.53
9.27
E
1
9.78
9.53
F
1.14
0.89
H
19.94
18.92
L
5.3
4.5
p
3.38
3.12
Q
1.75
1.50
q
27.94
U
1
34.16
33.91
U
2
9.91
9.65
w
1
0.25
0.01
w
2
0.6
0.023
1.345 0.390
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069
1.100
1.335 0.380
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
SOT895-1
ISSUE DATE
05-06-22
05-06-28
Fig 1. Package outline SOT895-1
BLC6G20-140_6G20LS-140_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
4 of 9
Philips Semiconductors
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Plastic earless flanged cavity package; 2 leads
SOT896-1
D
F
A
3
D
1
D
U
1
1
L
c
H
U
2
E
1
E
2
b
w2
M
D
M
Q
0
5
scale
10 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
inches
A
4.1
3.3
b
12.83
12.57
c
0.17
0.14
D
19.9
19.7
D
1
20.42
20.12
E
9.53
9.27
E
1
9.78
9.53
F
1.14
0.89
H
19.94
18.92
L
5.3
4.5
Q
1.75
1.50
U
1
20.70
20.45
U
2
9.91
9.65
w
2
0.6
0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.069 0.815 0.390
0.023
0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.059 0.805 0.380
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
SOT896-1
ISSUE DATE
05-06-22
05-06-28
Fig 2. Package outline SOT896-1
BLC6G20-140_6G20LS-140_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
5 of 9
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