INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
TIP42E
DESCRIPTION
·DC
Current Gain -h
FE
= 30(Min)@ I
C
= -
0.3A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -140V(Min)
·Complement
to Type TIP41E
APPLICATIONS
·Designed
for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Collector Power Dissipation
T
a
=25℃
Junction Temperature
Storage Temperature Range
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w
w
VALUE
-180
UNIT
V
-140
-5
V
V
-6
A
-10
-3
65
W
2
150
-65~150
℃
℃
A
A
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.92
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TIP42E
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= -30mA; I
B
= 0
-140
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -6A; I
B
= -1.5A
B
-1.5
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= -6A; V
CE
= -4V
-2.0
V
I
CES
Collector Cutoff Current
V
CE
= -180V; V
BE
= 0
-0.4
mA
I
CEO
Collector Cutoff Current
V
CE
= -90V; I
B
= 0
B
-0.7
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
Switching Time
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V
EB
= -5V; I
C
= 0
I
C
= -0.3A ; V
CE
= -4V
I
C
= -3A ; V
CE
= -4V
I
C
= -0.5A; V
CE
= -10V
I
C
= -6A; I
B1
= -I
B2
= -0.6A;
V
BE(off)
= -4V, R
L
= 5Ω
-1.0
mA
30
15
3
MHz
t
on
Turn-On Time
0.6
μs
t
off
Turn-Off Time
1.0
μs
isc Website：www.iscsemi.cn
Power technology
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