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BYV27-50(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15L, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size72KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BYV27-50(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15L, 2 PIN

BYV27-50(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BL
FEATURES
Low cost
GALAXY ELECTRICAL
BYV27 - 50(Z) - - - BYV27 - 600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0, 1.9,1.6 A
SUPER FAST RECTIFIER
DO - 15L
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar solvents
MECHANICAL DATA
Case: JEDEC DO-15L,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces,0.48 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
2.0
150
105
150
200
140
200
300
210
300
1.9
400
280
400
600
420
600
1.6
V
V
V
A
Peak forw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
40.0
A
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
100.0
25
62
100
- 55 ----- + 150
- 55 ----- + 150
1.05
1.25
V
A
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264014
BL
GALAXY ELECTRICAL
1.

BYV27-50(Z) Related Products

BYV27-50(Z) BYV27-200(Z) BYV27-100(Z) BYV27-600(Z) BYV27-150(Z) BYV27-300(Z) BYV27-400(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15L, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15L, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-15L, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15L, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-15L, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 1.9A, 300V V(RRM), Silicon, DO-15L, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 1.9A, 400V V(RRM), Silicon, DO-15L, 2 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.98 V 0.98 V 0.98 V 1.25 V 0.98 V 1.05 V 1.05 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 40 A 50 A 50 A 50 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 1.6 A 2 A 1.9 A 1.9 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 50 V 200 V 100 V 600 V 150 V 300 V 400 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.025 µs 0.025 µs 0.025 µs 0.05 µs 0.025 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker Galaxy Semi-Conductor Co., Ltd. - Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
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