BYV27-600(Z) datasheet, PDF - EEWORLD Datasheet

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BYV27-600(Z): DescriptionRectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15L, 2 PIN; CategoryDiscrete semiconductor diode; File Size72KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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BYV27-600(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15L, 2 PIN

BYV27-600(Z) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	SUPER FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	40 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1.6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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FEATURES

Low cost

GALAXY ELECTRICAL

BYV27 - 50(Z) - - - BYV27 - 600(Z)

VOLTAGE RANGE: 50 --- 600 V

CURRENT: 2.0, 1.9,1.6 A

SUPER FAST RECTIFIER

DO - 15L

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with alcohol,Isopropanol

and sim ilar solvents

MECHANICAL DATA

Case: JEDEC DO-15L,m olded plastic

Term inals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.017 ounces,0.48 gram s

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.

BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27

UNITS

-100

-50

-150

-200

-300

-400

-600

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectif ied current

9.5mm lead length,

@T

A

=75

V

RRM

V

RMS

V

DC

I

F(AV)

50

35

50

100

70

100

2.0

150

105

150

200

140

200

300

210

300

1.9

400

280

400

600

420

600

1.6

V

A

Peak forw ard surge current

10ms single half -sine-w ave

superimposed on rated load

@T

J

=125

I

FSM

50.0

40.0

A

Maximum instantaneous forw ard voltage

@ I

F

=I

F(AV)

Maximum reverse current

at rated DC blocking voltage

Maximum reverse recovery time

Typical junction capacitance

Typical thermal resistance

@T

A

=25

@T

A

=100

(Note1)

(Note2)

(Note3)

V

F

I

R

t

rr

C

J

R

θ

JA

T

J

T

STG

0.98

5.0

100.0

25

62

100

- 55 ----- + 150

1.05

1.25

V

A

50

ns

pF

/W

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

F

=0.5A, I

R

=1A, I

rr

=0.25A.

www.galaxycn.com

2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.

3. Thermal resistance f rom junction to ambient.

Document Number 0264014

BL

GALAXY ELECTRICAL

1.

BYV27-600(Z) Related Products

	BYV27-600(Z)	BYV27-200(Z)	BYV27-100(Z)	BYV27-50(Z)	BYV27-150(Z)	BYV27-300(Z)	BYV27-400(Z)
Description	Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15L, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-15L, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-15L, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-15L, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-15L, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.9A, 300V V(RRM), Silicon, DO-15L, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.9A, 400V V(RRM), Silicon, DO-15L, 2 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	0.98 V	0.98 V	0.98 V	0.98 V	1.05 V	1.05 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	40 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	1.6 A	2 A	2 A	2 A	2 A	1.9 A	1.9 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	600 V	200 V	100 V	50 V	150 V	300 V	400 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.05 µs	0.025 µs	0.025 µs	0.025 µs	0.025 µs	0.05 µs	0.05 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	Galaxy Semi-Conductor Co., Ltd.	-	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.

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