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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PXTA14
NPN Darlington transistor
Product data sheet
Supersedes data of 1999 Apr 14
2004 Dec 09
NXP Semiconductors
Product data sheet
NPN Darlington transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
High input impedance preamplifiers.
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complement: PXTA64.
MARKING
TYPE NUMBER
PXTA14
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PXTA14
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
MARKING CODE
(1)
*1N
3
PXTA14
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
2
TR1
TR2
3
2
1
1
sym087
Fig.1 Simplified outline (SOT89) and symbol.
VERSION
SOT89
2004 Dec 09
2
NXP Semiconductors
Product data sheet
NPN Darlington transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
V
BE
= 0 V
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
PXTA14
MAX.
30
30
10
500
1
200
1.3
+150
150
+150
V
V
V
UNIT
mA
A
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
f
T
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0 A; V
CB
= 30 V
V
BE
= 0 V; V
CE
= 30 V
I
C
= 0 A; V
EB
= 10 V
I
C
= 10 mA; V
CE
= 5 V; (see Fig.2)
I
C
= 100 mA; V
CE
= 5 V; (see Fig.2)
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I
C
= 100 mA; I
B
= 0.1 mA
I
C
= 100 mA; V
CE
= 5 V
I
C
= 30 mA; V
CE
= 5 V; f = 100 MHz
−
−
−
10 000
20 000
−
−
−
125
MIN.
MAX.
100
100
100
−
−
1.5
1.5
2
−
V
V
V
MHz
UNIT
nA
nA
nA
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
2004 Dec 09
3
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
handbook, full pagewidth
80000
hFE
MGD837
60000
40000
20000
0
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 2 V.
Fig.2 DC current gain; typical values.
2004 Dec 09
4
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