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HZS6.8NB2TA-E

Description
HZS6.8NB2TA-E
CategoryDiscrete semiconductor    diode   
File Size172KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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HZS6.8NB2TA-E Overview

HZS6.8NB2TA-E

HZS6.8NB2TA-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Certification statusNot Qualified
surface mountNO
technologyZENER
Terminal surfaceTIN COPPER
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Working test current5 mA
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.
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