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JAN1N5139A

Description
Variable Capacitance Diode, 6.8pF C(T), 60V, Silicon, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size154KB,9 Pages
ManufacturerTelCom Semiconductor, Inc. (Microchip Technology)
Websitehttp://www.telcom-semi.com/
Download Datasheet Parametric View All

JAN1N5139A Overview

Variable Capacitance Diode, 6.8pF C(T), 60V, Silicon, DO-7, GLASS PACKAGE-2

JAN1N5139A Parametric

Parameter NameAttribute value
MakerTelCom Semiconductor, Inc. (Microchip Technology)
package instructionGLASS PACKAGE-2
Reach Compliance Codeunknown
Minimum breakdown voltage60 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance4.41%
Minimum diode capacitance ratio2.7
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor350
GuidelineMIL-19500/383B
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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