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DSM1E1

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size46KB,3 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

DSM1E1 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon

DSM1E1 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
GENERAL-USE RECTIFIER DIODE
DSM1E
FEATURES
For general purpose.
Diffused-junction. Resin encapsulated.
Direction of polarity
OUTLINE DRAWING
φ
2.65
(0.10)
Unit in mm(inch)
φ
0.8
(0.03)
59MIN. (2.32)
5
(0.2)
1E1
DSM1E1
DSM1E2
DSM1E4
DSM1E6
Yellow
White
Blue
Red
Weight: 0.33 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Repetitive Peak Reverse Voltage
Average Forward Current
Surge(Non-Repetitive) Forward Current
I
2
t Limit Value
Operating Junction Temperature
Storage Temperature
V
RRM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Type
V
A
A
A
2
s
°C
°C
DSM1E1
100
DSM1E2
200
DSM1E4
400
27MIN.
(1.06)
DSM1E6
600
Single-phase half sine wave 180° conduction
1.0 TL = 100°C, Lead length = 6mm
(
Type mark
Type
Color of
cathode band
Cathode band
27MIN.
(1.06)
)
50( Without PIV, 10ms conduction, Tj = 40°C start )
10( Time = 2 ~ 10ms, I = RMS value )
-40 ~ +150
-40 ~ +150
Notes
(1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 2kg, Twist 90°×1 cycle.
CHARACTERISTICS(T
L
=25°C)
Items
Peak Reverse Current
Peak Forward Voltage
Steady State Thermal Impedance
Symbols
I
RRM
V
FM
R
th(j-a)
R
th(j-l)
Units
µA
V
°C/W
Min.
-
-
-
Typ.
-
-
-
Max.
20
10
1.0
80
50
Test Conditions
DSM1E1,2
DSM1E4,6
Rated V
RRM
I
FM
=1.0Ap, Single-phase half sine
wave 1 cycle
Lead length = 6 mm
PDE-DSM1E-0

DSM1E1 Related Products

DSM1E1 DSM1E6 DSM1E2 DSM1E4
Description Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 600 V 200 V 400 V
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL

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