BAS85
Vishay Semiconductors
formerly General Semiconductor
Schottky Diode
Features
MiniMELF (SOD-80C)
Cathode Band
.063 (1.6)
Dia.
.051 (1.3)
• For general purpose applications
• This diode features low turn-on voltage.
• The devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges.
• This diode is also available in a DO-35 case with
type designation BAT85.
.146 (3.7)
.130 (3.3)
.019 (0.48)
.011 (0.28)
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
Cathode Band Color:
Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Continuous Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Peak Forward Current at T
amb
= 25°C
Surge Forward Current at t
p
< 1s, T
amb
= 25°C
Power Dissipation at T
amb
= 65°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
I
FM
I
FSM
P
tot
R
θJA
T
j
T
S
(T
A
= 25°C unless otherwise noted)
Value
30
200
(1)
300
(1)
600
(1)
200
(1)
430
(1)
125
–55 to +150
Unit
V
mA
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
(T
Parameter
Reverse Breakdown Voltage
Leakage Current
J
= 25°C unless otherwise noted)
Symbol
V
(BR)R
I
R
Test Condition
I
R =
10µA (pulsed)
V
R
= 25V
Pulse Test tp < 300µs
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 1V, f = 1MHz
I
F
= 10mA, I
R =
10mA
I
R
= 1mA
Min
30
—
—
—
—
—
—
—
—
Typ
—
0.2
—
—
—
0.5
—
—
—
Max
—
2
0.24
0.32
0.4
—
0.8
10
5
Unit
V
µA
Forward Voltage
V
F
V
Capacitance
Reverse Recovery Time
C
tot
t
rr
pF
ns
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
Document Number 88131
10-May-02
www.vishay.com
1
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