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Description
3 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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3 A, 200 V, SILICON, RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
S3AB - - - S3MB
111REVERSE
VOLTAGE: 50 --- 1000 V
CURRENT:
3.0
A
SURFACE MOUNT RECTIFIER
Plastic package has underwriters laboratory
111
flammability classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated
chip
Terminals:Solder plated, solderable per MIL-STD-
1111750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
½½½½(½½)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
S3AB
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum average forw ord rectified current
V
@ T
L
=90
O
C
Peak forw ard surge current @ T
L
= 110°C 8.3ms
V
single half-sine-w ave superimposed on rated
V
load(JEDEC Method)
Maximum Instantaneous forw ard voltage at 3.0 A
Maximum DC reverse current
at rated DC blockjing voltage
Typical junction capacitance
Typical thermal resitance (NOTE 2)
@T
A
=25
o
C
@T
A
=100
o
C
S3BB
SBB
100
70
100
S3DB S3GB S3JB S3KB S3MB
UNITS
SDB
200
140
200
SAB
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
JA
SGB
400
280
400
3.0
100
1.15
10
100
35
40
SJB
600
420
600
SKB
800
560
800
SMB
1000
700
1000
V
V
V
A
A
V
50
35
50
pF
o
C/W
o
Operating junction and storage temperature range
T
J
T
STG
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
-55--------+150
C
www.galaxycn.com
2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm
2
) copper pad areas
Document Number 0280011
BL
GALAXY ELECTRICAL
1.

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