IRFU321 datasheet, PDF - EEWORLD Datasheet

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IRFU321: DescriptionPower Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA; CategoryDiscrete semiconductor The transistor; File Size154KB，7 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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IRFU321 Overview

Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

IRFU321 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	190 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	350 V
Maximum drain current (Abs) (ID)	3.1 A
Maximum drain current (ID)	3.1 A
Maximum drain-source on-resistance	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	65 ns
Maximum opening time (tons)	36 ns

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IRFU321 Related Products

	IRFU321	IRFU322	IRFU320
Description	Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA	Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA	Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Harris	Harris	Harris
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	190 mJ	190 mJ	190 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	350 V	400 V	400 V
Maximum drain current (Abs) (ID)	3.1 A	2.6 A	3.1 A
Maximum drain current (ID)	3.1 A	2.6 A	3.1 A
Maximum drain-source on-resistance	1.8 Ω	2.5 Ω	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-251AA	TO-251AA
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	50 W	50 W	50 W
Maximum power dissipation(Abs)	50 W	50 W	42 W
Maximum pulsed drain current (IDM)	12 A	10 A	12 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	65 ns	65 ns	65 ns
Maximum opening time (tons)	36 ns	36 ns	36 ns
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-

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