RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NEC Electronics |
| package instruction | MICROWAVE, R-XQMW-F4 |
| Contacts | 4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 6 V |
| Maximum drain current (ID) | 0.6 A |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | S BAND |
| JESD-30 code | R-XQMW-F4 |
| JESD-609 code | e6 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | MICROWAVE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN BISMUTH |
| Terminal form | FLAT |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| NE650R479A-T1-A | NE650R479A-A | NE650R479A | |
|---|---|---|---|
| Description | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN |
| Is it Rohs certified? | conform to | conform to | incompatible |
| Maker | NEC Electronics | NEC Electronics | NEC Electronics |
| package instruction | MICROWAVE, R-XQMW-F4 | 79A, 4 PIN | 79A, 4 PIN |
| Reach Compliance Code | compliant | compliant | compliant |
| Shell connection | SOURCE | SOURCE | SOURCE |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 6 V | 6 V | 6 V |
| Maximum drain current (ID) | 0.6 A | 0.6 A | 0.6 A |
| FET technology | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| highest frequency band | S BAND | S BAND | S BAND |
| JESD-30 code | R-XQMW-F4 | R-XQMW-F4 | R-XQMW-F4 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROWAVE | MICROWAVE | MICROWAVE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 260 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | FLAT | FLAT | FLAT |
| Terminal location | QUAD | QUAD | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 10 | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| JESD-609 code | e6 | - | e0 |
| Terminal surface | TIN BISMUTH | - | TIN LEAD |
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