NE650R479A-A datasheet, PDF - EEWORLD Datasheet

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NE650R479A-A: DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size219KB，8 Pages; ManufacturerNEC Electronics; Environmental Compliance

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NE650R479A-A Overview

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

NE650R479A-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NEC Electronics
package instruction	79A, 4 PIN
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
Maximum drain current (ID)	0.6 A
FET technology	METAL SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-XQMW-F4
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROWAVE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	QUAD
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

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NE650R479A-A Related Products

	NE650R479A-A	NE650R479A-T1-A	NE650R479A
Description	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN
Is it Rohs certified?	conform to	conform to	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	79A, 4 PIN	MICROWAVE, R-XQMW-F4	79A, 4 PIN
Reach Compliance Code	compliant	compliant	compliant
Shell connection	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	6 V	6 V	6 V
Maximum drain current (ID)	0.6 A	0.6 A	0.6 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	S BAND	S BAND	S BAND
JESD-30 code	R-XQMW-F4	R-XQMW-F4	R-XQMW-F4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROWAVE	MICROWAVE	MICROWAVE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	10	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
JESD-609 code	-	e6	e0
Terminal surface	-	TIN BISMUTH	TIN LEAD

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