SBP735 THRU SBP760
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25"(6.35mm) from case
CURRENT 7.5Amperes
VOLTAGE 35 to 60 Volts
ITO-220A
10 0.5
3.2
6.4 0.1
4.5 0.2
2.7
2.7 0.2
3.7 0.2
Mechanical Data
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
PIN 1
+
5.08
0.7 0.2
13Min
1.3 0.2
15 0.3
0.5
2.4
PIN 1
CASE
PIN 2
CasePositive
+
CASE
PIN 2
+
Case Negative
Suffix"R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at T
C
=105℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 7.5A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=125℃
V
RRM
V
RMS
V
DC
I(
AV
)
I
FRM
SBP735
35
25
35
SBP745
SBP750
50
35
50
7.5
15.0
SBP760
60
42
60
Units
Volts
Volts
Volts
Amps
Amps
45
32
45
I
FSM
150.0
Amps
V
F
I
R
Rθ
JC
T
J
T
STG
0.65
1.0
15
5.0
-65 to +150
-65 to +150
0.75
Volts
50
mA
℃/W
℃
℃
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBP735 THRU SBP760
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
10
RESISTIVE OR INDUCTIVE LOAD
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
175
PEAK FORWARD SURGE
CURRENT (AMPERES)
150
125
100
75
50
25
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
8.0
6.0
4.0
2.0
0
0
50
100
150
LEAD TEMPERATURE (℃)
──
SBP735--SBP745
- - - SBP750&SBP760
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT (AMPERES)
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
──
SBP735--SBP745
- - - SBP750&SBP760
10
T
J
=125℃
PULSE WIDTH=300
1% DUTY CYCLE
T
J
=125℃
㎲
1
1
T
J
=25℃
0.1
T
J
=75℃
0.1
0.01
──
SBP735--SBP745
- - - SBP750&SBP760
0.01
0
0.1
0.2
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001
0
20
40
60
T
J
=25℃
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,℃/ W
4000
JUNCTION CAPACITANCE (pF)
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
1000
10
1
100
40
0.1
──
SBP735--SBP745
- - - SBP750&SBP760
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
1
10
100
REVERSE VOLTAGE. VOLTS
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