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IRFY340(M)PBF

Description
400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size145KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRFY340(M)PBF Overview

400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

IRFY340(M)PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage400 V
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
PD - 94189
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
IRFY340
IRFY340M
IRFY340,IRFY340M
400V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
®
R
DS(on)
0.55
0.55
I
D
8.7A
8.7A
Eyelets
Glass
Glass
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-257AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Glass Eyelets
For Space Level Applications
Refer to Ceramic Version Part
Numbers IRFY340C, IRFY340CM
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
8.7
5.5
35
100
0.8
±20
520
8.7
10
4.0
-55 to 150
o
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
C
300(0.063in./1.6mm from case for 10 sec)
3.3 (Typical)
g
www.irf.com
1
4/18/01
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