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IRFY420C-JQR-BR1

Description
Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRFY420C-JQR-BR1 Overview

Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY420C-JQR-BR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Codecompliant
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AB
JESD-30 codeS-MSFM-P3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
IRFY420C
Dimensions in mm (inches).
10.6 (0.42)
0.8
(0.03)
4.6 (0.18)
16.5 (0.65)
3.70 Dia. Nom
N-Channel MOSFET in
a Hermetically sealed
TO257AB Metal Package.
1.5(0.53)
10.6 (0.42)
1 2 3
12.70 (0.50 min)
V
DSS
= 500V
I
D
= 25A
R
DS(ON)
= 0.23Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
2.54 (0.1)
BSC
1.0
(0.039)
2.70
(0.106)
TO257AB (TO220M)
PINOUTS
1 – Gate
2 – Drain
Case – Source
Parameter
V
DSS
I
D
P
D
R
DS(ON)
C
ISS
Q
g
t
td(on)
t
tr
t
td(off)
t
f
Drain – Source Breakdown Voltage
Continuous Drain Current
Power Dissipation
Static Drain – Source On–State Resistance
Input Capacitance
Total Gate Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Min.
Typ.
Max.
500
25
300
0.23
Units
V
A
W
pF
nC
ns
ns
ns
ns
4200
210
33
140
120
99
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
13-Sep-02

IRFY420C-JQR-BR1 Related Products

IRFY420C-JQR-BR1 IRFY420C 2SA1283
Description Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN Silicon PNP transistor in a TO-92LM Plastic Package
Is it Rohs certified? conform to conform to -
Maker TT Electronics plc TT Electronics plc -
package instruction HERMETIC SEALED, METAL, TO-220M, 3 PIN HERMETIC SEALED, METAL, TO-220M, 3 PIN -
Reach Compliance Code compliant compliant -
Shell connection SOURCE SOURCE -
Configuration SINGLE SINGLE -
Minimum drain-source breakdown voltage 500 V 500 V -
Maximum drain current (ID) 25 A 25 A -
Maximum drain-source on-resistance 0.23 Ω 0.23 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-257AB TO-257AB -
JESD-30 code S-MSFM-P3 S-MSFM-P3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Package body material METAL METAL -
Package shape SQUARE SQUARE -
Package form FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type N-CHANNEL N-CHANNEL -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal form PIN/PEG PIN/PEG -
Terminal location SINGLE SINGLE -
Transistor component materials SILICON SILICON -
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