IRFY420C datasheet, PDF - EEWORLD Datasheet

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IRFY420C: DescriptionPower Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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IRFY420C Overview

Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY420C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	HERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON

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IRFY420C

Dimensions in mm (inches).

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

16.5 (0.65)

3.70 Dia. Nom

N-Channel MOSFET in

a Hermetically sealed

TO257AB Metal Package.

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

V

DSS

= 500V

I

D

= 25A

R

DS(ON)

= 0.23Ω

Ω

All Semelab hermetically sealed products can be

processed in accordance with the requirements

of BS, CECC and JAN, JANTX, JANTXV and

JANS specifications.

2.54 (0.1)

BSC

1.0

(0.039)

2.70

(0.106)

TO257AB (TO220M)

PINOUTS

1 – Gate

2 – Drain

Case – Source

Parameter

V

DSS

I

D

P

D

R

DS(ON)

C

ISS

Q

g

t

td(on)

t

tr

t

td(off)

t

f

Drain – Source Breakdown Voltage

Continuous Drain Current

Power Dissipation

Static Drain – Source On–State Resistance

Input Capacitance

Total Gate Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Min.

Typ.

Max.

500

25

300

0.23

Units

V

A

W

Ω

pF

nC

ns

4200

210

33

140

120

99

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

13-Sep-02

IRFY420C Related Products

	IRFY420C	IRFY420C-JQR-BR1	2SA1283
Description	Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN	Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN	Silicon PNP transistor in a TO-92LM Plastic Package
Is it Rohs certified?	conform to	conform to	-
Maker	TT Electronics plc	TT Electronics plc	-
package instruction	HERMETIC SEALED, METAL, TO-220M, 3 PIN	HERMETIC SEALED, METAL, TO-220M, 3 PIN	-
Reach Compliance Code	compliant	compliant	-
Shell connection	SOURCE	SOURCE	-
Configuration	SINGLE	SINGLE	-
Minimum drain-source breakdown voltage	500 V	500 V	-
Maximum drain current (ID)	25 A	25 A	-
Maximum drain-source on-resistance	0.23 Ω	0.23 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-257AB	TO-257AB	-
JESD-30 code	S-MSFM-P3	S-MSFM-P3	-
Number of components	1	1	-
Number of terminals	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Package body material	METAL	METAL	-
Package shape	SQUARE	SQUARE	-
Package form	FLANGE MOUNT	FLANGE MOUNT	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal form	PIN/PEG	PIN/PEG	-
Terminal location	SINGLE	SINGLE	-
Transistor component materials	SILICON	SILICON	-

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