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IRGBC40M-STRLPBF

Description
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size78KB,2 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
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IRGBC40M-STRLPBF Overview

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN

IRGBC40M-STRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
Other featuresSHORT CIRCUIT RATED
Shell connectionCOLLECTOR
Maximum collector current (IC)40 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment160 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)380 ns
Nominal on time (ton)28 ns
VCEsat-Max3 V

IRGBC40M-STRLPBF Related Products

IRGBC40M-STRLPBF 2SC2412-SOT23 IRGBC40M-STRR IRGBC40M-STRL
Description Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN NPN Transistors Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
Is it lead-free? Lead free - Contains lead Contains lead
Is it Rohs certified? conform to - incompatible incompatible
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 - 3 3
Reach Compliance Code compliant - compliant compliant
Other features SHORT CIRCUIT RATED - SHORT CIRCUIT RATED SHORT CIRCUIT RATED
Shell connection COLLECTOR - COLLECTOR COLLECTOR
Maximum collector current (IC) 40 A - 40 A 40 A
Collector-emitter maximum voltage 600 V - 600 V 600 V
Configuration SINGLE - SINGLE SINGLE
Gate emitter threshold voltage maximum 5.5 V - 5.5 V 5.5 V
Gate-emitter maximum voltage 20 V - 20 V 20 V
JESD-30 code R-PSSO-G2 - R-PSSO-G2 R-PSSO-G2
Number of components 1 - 1 1
Number of terminals 2 - 2 2
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power consumption environment 160 W - 160 W 160 W
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES
Terminal form GULL WING - GULL WING GULL WING
Terminal location SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature 40 - NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL - MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON - SILICON SILICON
Nominal off time (toff) 380 ns - 380 ns 380 ns
Nominal on time (ton) 28 ns - 28 ns 28 ns
VCEsat-Max 3 V - 3 V 3 V
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