IRGBC40M-STRR datasheet, PDF - EEWORLD Datasheet

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IRGBC40M-STRR: DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size78KB，2 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGBC40M-STRR Overview

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN

IRGBC40M-STRR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
Other features	SHORT CIRCUIT RATED
Shell connection	COLLECTOR
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	160 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	380 ns
Nominal on time (ton)	28 ns
VCEsat-Max	3 V

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IRGBC40M-STRR Related Products

	IRGBC40M-STRR	2SC2412-SOT23	IRGBC40M-STRLPBF	IRGBC40M-STRL
Description	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	NPN Transistors	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
Is it lead-free?	Contains lead	-	Lead free	Contains lead
Is it Rohs certified?	incompatible	-	conform to	incompatible
Maker	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	SMALL OUTLINE, R-PSSO-G2	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	-	3	3
Reach Compliance Code	compliant	-	compliant	compliant
Other features	SHORT CIRCUIT RATED	-	SHORT CIRCUIT RATED	SHORT CIRCUIT RATED
Shell connection	COLLECTOR	-	COLLECTOR	COLLECTOR
Maximum collector current (IC)	40 A	-	40 A	40 A
Collector-emitter maximum voltage	600 V	-	600 V	600 V
Configuration	SINGLE	-	SINGLE	SINGLE
Gate emitter threshold voltage maximum	5.5 V	-	5.5 V	5.5 V
Gate-emitter maximum voltage	20 V	-	20 V	20 V
JESD-30 code	R-PSSO-G2	-	R-PSSO-G2	R-PSSO-G2
Number of components	1	-	1	1
Number of terminals	2	-	2	2
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	160 W	-	160 W	160 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING
Terminal location	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	40	NOT SPECIFIED
transistor applications	MOTOR CONTROL	-	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	-	SILICON	SILICON
Nominal off time (toff)	380 ns	-	380 ns	380 ns
Nominal on time (ton)	28 ns	-	28 ns	28 ns
VCEsat-Max	3 V	-	3 V	3 V

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